A Novel Probe Size Measurement Method for a Fine Electron Beam : Inspection and Testing
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-04-30
著者
-
NAKAYAMA Yoshinori
Central Research Laboratory, Hitachi Ltd.
-
Nakayama Yoshinori
Central Research Laboratory Hitachi Ltd.
-
Nakayama Yoshinori
Central Research Laboratory Hitachi Lid.
-
OKAZAKI Shinji
Central Research Laboratory, Hitacti, Ltd.
-
Okazaki Shinji
Central Research Laboratory Hitachi Ltd.
-
Okazaki Shinji
Central Research Lab. Hitachi Ltd.
-
Nakayama Yoshinori
Central Research Lab., Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
関連論文
- InGaAsP/InP Laser Diodes Mounted on Semi-Insulating SiC Ceramics : B-2: LD AND LED-1
- Cell Projection Lithography with Scattering Contrast
- Correlation of Nano Edge Roughness in Resist Patterns with Base Polymers
- Optical Performance of KrF Excimer Laser Lithography with Phase Shift Mask for Fabrication of 0.15 μm and Below
- Novel Process for Direct Delineation of Spin on Glass (SOG)
- Thermal Characteristics of Si Mask for EB Cell Projection Lithography
- Nanofabrication with Langmuir-Blodgett Films of a Chemical Amplification Resist SAL601
- Formation of Fractionated Novolak Resin Langmuir-Blodgett Films
- Fabrication of 0.1μm Complementary Metal-Oxide-Semiconductor Devices : Micro/nanofabrication and Devices
- Fabrication of 0.1μm Complementary Metal-Oxide-Semiconductor Devices
- Electron Beam Direct Writing Technology for 64-Mb DRAM LSIs : Lithography Technology
- Electron Beam Direct Writing Technology for 64-Mb DRAM LSIs
- 0.13 μm Pattern Delineation Using KrF Excimer Laser Light
- Algorithm for Phase-Shift Mask Design with Priority on Shifter Placement
- Phase-Shifting Technology for ULSI Patterning (Special Issue on Opto-Electronics and LSI)
- Improved Alignment Accuracy Using Lens-Distortion Correction for Electron-Beam Lithography in Mix-and-Match with an Optical Stepper
- EB call projection Lithography : Lithography Technology
- Electron Beam Mask Fabrication for MOSLSI's with 1.5 μm Design Rule : A-1: ADVANCED LITHOGRAPHY AND PROCESS
- Electron Beam Enhanced Surface Photovoltage
- Fabrication of Deep Sub-μm Narrow-Channel Si-MOSFET's with Twofold-Gate Structures : Microfabrication and Physics
- A Novel Probe Size Measurement Method for a Fine Electron Beam : Inspection and Testing
- Highly Accurate Grating Reference Fabricated by EB Cell Projection Lithography
- Effect of EB Acceleration Voltage and Beam Sharpness on Process Latitude of 0.2 μm Lines
- A Novel Probe Size Measurement Method for a Fine Electron Beam
- Analysis of Chemical Amplification Resist Systems Using a Kinetic Model and Numerical Simulation : Resist Material and Process
- Evaluation of Pupil-Filtering in High-Numerical Aperture I-Line Lens
- Effect of EB Acceleration Voltage and Beam Sharpness on Process Latitude of 0.2μm Lines : Electron Beam Lithography
- Study of Measurement Condition Optimization in Critical Dimension-Scanning Electron Microscope
- Fabrication of Deep Sub-$\mu$m Narrow-Channe1 Si-MOSFET's with Twofold-Gate Structures