Study of Measurement Condition Optimization in Critical Dimension-Scanning Electron Microscope
スポンサーリンク
概要
- 論文の詳細を見る
The critical-dimension scanning electron microscope (CD-SEM) is an essential tool for semiconductor fabrication process control because of its high resolution and high precision. However, in ArF lithography, the CD of resist changes during CD-SEM measurement due to shrinkage caused by the electron beam irradiation. This shrinkage can be reduced by measurement parameters; however, there is a trade-off relationship between shrinkage and precision. Thus, measuring the CD of an ArF resist pattern precisely with small shrinkage is difficult. The authors propose an optimization method using the Taguchi method. Four measurement parameters were chosen as control factors for an L18 orthogonal array: probe current, acceleration voltage, horizontal length of field-of-view, and number of image acquisitions. As a result, high prediction accuracy was obtained that is smaller than 0.2 nm for shrinkage and 0.1 nm for precision. Moreover, an optimum measurement condition that achieves 0.28 nm shrinkage and 0.37 nm precision was also obtained. Thus, the proposed method was demonstrated as a promising method to optimize CD measurement parameters.
- 2008-08-25
著者
-
Kawada Hiroki
Hitachi High-technologies Corp.
-
Sohda Yasunari
Central Research Laboratory Hitachi Ltd.
-
Yamanashi Hiromasa
Central Research Laboratory Hitachi Ltd.
-
Nakayama Yoshinori
Central Research Lab., Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
-
Hitomi Keiichiro
Central Research Lab., Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
-
Kawada Hiroki
Hitachi High-Technologies Co., Hitachinaka, Ibaraki 312-8504, Japan
-
Sohda Yasunari
Central Research Lab., Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
-
Yamanashi Hiromasa
Central Research Lab., Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
関連論文
- InGaAsP/InP Laser Diodes Mounted on Semi-Insulating SiC Ceramics : B-2: LD AND LED-1
- Polymer Dissolution Characteristics of Radiation-Induced Grafted Resist in X-Ray Lithography
- Ring-Field Extreme Ultraviolet Exposure System Using Aspherical Mirrors
- Design and Evaluation of an Electron Objective Lens System with Two Lenses and Two Defiectors
- Analysis of Eddy Current Effects in an Electron Optical Column
- Cell Projection Lithography with Scattering Contrast
- Photon-Stimulated Ion Desorption Measurement of Organosilicon Resist Reactions in Extreme Ultraviolet Lithography
- Thermal Characteristics of Si Mask for EB Cell Projection Lithography
- Impact of Long-Period Line-Edge Roughness (LER) on Accuracy in Critical Dimension (CD) Measurement and New Guideline for CD Metrology
- Electron Beam Direct Writing Technology for 64-Mb DRAM LSIs : Lithography Technology
- Electron Beam Direct Writing Technology for 64-Mb DRAM LSIs
- Characterization of Line-edge Roughness in Cu/low-k Interconnect Pattern
- Improved Alignment Accuracy Using Lens-Distortion Correction for Electron-Beam Lithography in Mix-and-Match with an Optical Stepper
- EB call projection Lithography : Lithography Technology
- A Novel Probe Size Measurement Method for a Fine Electron Beam : Inspection and Testing
- Characterization of Line-Edge Roughness in Cu/Low-$k$ Interconnect Pattern
- Highly Accurate Grating Reference Fabricated by EB Cell Projection Lithography
- A Novel Probe Size Measurement Method for a Fine Electron Beam
- Image Simulation of Extreme Ultraviolet Lithography Optics: Effect of Multilayer Coatings
- Study of Measurement Condition Optimization in Critical Dimension-Scanning Electron Microscope
- Impact of Long-Period Line-Edge Roughness (LER) on Accuracy in Critical Dimension (CD) Measurement and New Guideline for CD Metrology
- Simulation of Limited-Area Cathode as Mask-Irradiation Source
- Measurements of Variable-Shaped Electron Beams with Solid-State Detector and Scattering Aperture
- Preparatory Study for the Matrix-Pattern Imaging, EB System
- Charge Modeling for Metal Layer on Insulating Substrate
- Precise Cross-Sectional Measurement of Photoresist Shrinkage Caused by Electron Beam Irradiation
- Precise Cross-Sectional Measurement of Photoresist Shrinkage Caused by Electron Beam Irradiation (Special Issue : Microprocesses and Nanotechnology)