EB call projection Lithography : Lithography Technology

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1991-01-31

著者

• Matsuzaka Takashi

  Central Research Laboratory Hitachi Ltd.

• SAITOU Norio

  Central Research Laboratory, Hitachi, Ltd.

• NAKAYAMA Yoshinori

  Central Research Laboratory, Hitachi Ltd.

• OKUMURA Masahide

  Central Research Laboratory, Hitachi. Ltd.

• Nakayama Yoshinori

  Central Research Laboratory Hitachi Lid.

• OKAZAKI Shinji

  Central Research Laboratory, Hitacti, Ltd.

• Saitou N

  Central Research Laboratory Hitachi. Ltd.

• Saitou Norio

  Central Reserch Labolatories Hitachi Ltd.

• Saitou Norio

  Central Research Lab. Hitachi Ltd.

• Okazaki Shinji

  Central Research Lab. Hitachi Ltd.

• Matsuzaki T

  Department Of Applied Chemistry Faculty Of Engineering Himeji Institute Of Technology

• Okumura Masahide

  Central Research Laboratory Hitachi Ltd

• Nakayama Yoshinori

  Central Research Lab., Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan

関連論文

• Lattice parameter determination of a strained area of an InAs layer on a GaAs substrate using CBED
• Stitching Error Analysis in an Electron Beam Lithography System: Column Vibration Effect
• The Requirements for Future Elcetron-Beam Reticle Fabrication Systems from an Error Analysis Viewpoint
• Error Analysis in Electron Beam Lithography System : Thermal Effects on Positioning Accuracy
• Comparison and Problems of Measured Values of LH, FSH, and PRL among Measurement Systems
• Site-Specific Studies on X-Ray Magnetic Circular Dichroism at Fe K Edge for Transition-Metal Ferrites
• X-Ray Diffuse Scattering Study of Magnetite by the Valence-Difference Contrast Method
• Proposal of a Next-Generation Super Resolution Technique
• Photolithography System Using Modified Illumination
• InGaAsP/InP Laser Diodes Mounted on Semi-Insulating SiC Ceramics : B-2: LD AND LED-1
• Microstructure and Electrical Properties of (Pb, La)(Zr. Ti)O_3 Films Crystallized from Amorphous State by TWO-Step Postdeposition Annealing
• Effects of Pt/SrRuO_3 Top Electrodes on Ferroelectric Properties of Epitaxial(Pb, La)(Zr, Ti)O_3 Thin Films
• Improvement of n-Type Poly-Si Film Properties by Solid Phase Crystallization Method
• Absolute Measurement of Lattice Spacing d(220)in Floating Zone Silicon Crystal
• Absolute Measurement of Lattice Spacing d(220) Silicon Crystal in Floating Zone
• Sub-Nanometer Scale Measurements of Silicon Oxide Thickness by Spectroscopic Ellipsometry
• Sub-Nanometer Scale Measurements of Silicon Oxide Thickness by Spectroscopic Ellipsometry
• Development of Stable a-Si Solar Cells with Wide-Gap a-Si:H i-layers Deposited by an Inert Gas Plasma Treatment Method
• Practical Simulation of the I-V Curve for Amorphous-Silicon-Based Multijunction Solar Cells after Light Soaking
• Aggregation of Monocrystalline β-FeSi_2 by Annealing and by Si Overlayer Growth
• Defects in Ion Implanted Hg_Cd_Te Probed by Monoenergetic Positron Beams
• Defects and Their Annealing Properties in B^+-Implanted Hg_Cd_Te Studied by Positron Annihilation
• Preparatory Study for the Matrix-Pattern Imaging, BE System
• Design and Evaluation of an Electron Objective Lens System with Two Lenses and Two Defiectors
• Analysis of Eddy Current Effects in an Electron Optical Column
• Cell Projection Lithography with Scattering Contrast
• Correlation of Nano Edge Roughness in Resist Patterns with Base Polymers
• Optical Performance of KrF Excimer Laser Lithography with Phase Shift Mask for Fabrication of 0.15 μm and Below
• Novel Process for Direct Delineation of Spin on Glass (SOG)
• Intensity Variation of Transition Radiation Induced by Adsorption of Nitrogen on W(100) Surface
• Nonlinear Optical Properties of CdTe Microcrystallites in CaF_2 Thin Film
• Optical Properties of CdTe Microcrystallites in CaF_2
• Thermal Characteristics of Si Mask for EB Cell Projection Lithography
• Role of Ion Bombardment in Field Emission Current Instability
• Nanofabrication with Langmuir-Blodgett Films of a Chemical Amplification Resist SAL601
• Formation of Fractionated Novolak Resin Langmuir-Blodgett Films
• Fabrication of 0.1μm Complementary Metal-Oxide-Semiconductor Devices : Micro/nanofabrication and Devices
• Fabrication of 0.1μm Complementary Metal-Oxide-Semiconductor Devices
• Production Mechanism of a Large-Diameter Uniform Electron Cyclotron Resonance Plasma Generated by a Circular TE_ Mode Microwave
• Magnetotransport Properties of a Single-Crystalline β-FeSi_2 Layer Grown on Si(001) Substrate by Reactive Deposition Epitaxy
• Electron Beam Direct Writing Technology for 64-Mb DRAM LSIs : Lithography Technology
• Electron Beam Direct Writing Technology for 64-Mb DRAM LSIs
• 0.13 μm Pattern Delineation Using KrF Excimer Laser Light
• Algorithm for Phase-Shift Mask Design with Priority on Shifter Placement
• Phase-Shifting Technology for ULSI Patterning (Special Issue on Opto-Electronics and LSI)
• Improved Alignment Accuracy Using Lens-Distortion Correction for Electron-Beam Lithography in Mix-and-Match with an Optical Stepper
• Active Vibration Correction in Electron Beam Lithography System
• High Speed Electron Beam Cell Projection Exposure System (Special Issue on Quarter Micron Si Device and Process Technologies)
• EB call projection Lithography : Lithography Technology
• Mask Fabrication with Submicron Line-Width by Electron Beam
• Fine Chromium Grating Directly Made by Irradiating Electron Beam
• Electron Beam Mask Fabrication for MOSLSI's with 1.5 μm Design Rule : A-1: ADVANCED LITHOGRAPHY AND PROCESS
• Electron Beam Enhanced Surface Photovoltage
• Fabrication of Deep Sub-μm Narrow-Channel Si-MOSFET's with Twofold-Gate Structures : Microfabrication and Physics
• A Novel Probe Size Measurement Method for a Fine Electron Beam : Inspection and Testing
• Highly Accurate Grating Reference Fabricated by EB Cell Projection Lithography
• Effect of EB Acceleration Voltage and Beam Sharpness on Process Latitude of 0.2 μm Lines
• Evaluation of the Waveguide Effect in Proximity X-Ray Lithography Using an Optical Trace Method
• A Novel Probe Size Measurement Method for a Fine Electron Beam
• Phase-Hologram Fabrication with a Computer-Controlled Electron Beam
• Monte Carlo Simulation for the Energy Dissipation Profiles of 5-20 keV Electrons in Layered Structures
• Change of Apparent Sensitivity of an Electron Resist Due to Backing Materials
• Analysis of Chemical Amplification Resist Systems Using a Kinetic Model and Numerical Simulation : Resist Material and Process
• Evaluation of Pupil-Filtering in High-Numerical Aperture I-Line Lens
• Effect of EB Acceleration Voltage and Beam Sharpness on Process Latitude of 0.2μm Lines : Electron Beam Lithography
• Electron Beam Lithography-Present and Future
• Study of Measurement Condition Optimization in Critical Dimension-Scanning Electron Microscope
• Analysis of Trapezoid Distortion due to Charge-Up in Electron Beam Recording
• Preparatory Study for the Matrix-Pattern Imaging, EB System
• Fabrication of Deep Sub-$\mu$m Narrow-Channe1 Si-MOSFET's with Twofold-Gate Structures

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