Evaluation of the Waveguide Effect in Proximity X-Ray Lithography Using an Optical Trace Method

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In proximity X-ray lithography, mask-patterns may be 500 to 1000 times as thick as the X-ray wavelength. This suggests the occurrence of physical phenomena such as interference between wave modes propagating through a mask pattern. Change in intensity profiles of X-rays caused by such interference, referred to as the waveguide effect, is re-evaluated through a new simulation method. This simulation uses a technique based on the optical trace method to superpose rays that can propagate the mask pattern. As a result, the influence of the waveguide effect can be calculated for the mask pattern consisting of not only a perfect conductor but also a real material. The feasibility of this simulation is investigated by comparing the intensity profiles of X-rays with those obtained using a previous simulation method based on Maxwell's equations with a mask pattern assumed to be a perfect conductor. The results suggest that the new simulation is applicable for wide mask pattern sizes ranging from 500 nm (0.5 μm) to below 100 nm (0.1 μm). The simulation results also show that the waveguide effect makes intensity profiles of X-rays propagated through a 50-nm-wide mask pattern of tungsten (W) narrower than the pattern width. Furthermore, the energy of X-rays propagated through this mask pattern is found to decrease about 12%. These results indicate that the waveguide effect influences the intensity profiles of X-rays propagated through the mask pattern, even if it consists of real materials.
社団法人応用物理学会の論文
1995-05-15

Evaluation of the Waveguide Effect in Proximity X-Ray Lithography Using an Optical Trace Method

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