The Effects of Secondary Electrons from a Silion Substrate on SR X-Ray Lithography
スポンサーリンク
概要
- 論文の詳細を見る
The effects of secondary electrons from an Si substrate have been investigated quantitatively in SR lithography. It is confirmed that secondary electrons from an Si substrate produce undercuts of 0.1 $\mu$m in depth in the replicated resist patterns. The Si KLL Auger electron proves to be the main cause of this problem. This is ascertained through analysis of many kinds of secondary electrons. Moreover, eliminating the wavelength which excites the Si 1s electron from the exposing SR is one promising way to lessen this problem. The resolution of SR lithography is also confirmed to improve to less than 0.1 $\mu$m in the practical wavelength, if secondary electrons from the substrate are effectively minimized.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-10-20
著者
-
Ogawa Taro
Central Research Laboratory Hitachi Ltd.
-
Mochiji Kozo
Central Research Laboratory Hitachi Ltd.
-
Kimura Takeshi
Central Research Ladoratory Hitachi Ltd
-
Soda Yasunari
Central Research Ladoratory Hitachi Ltd
-
Ogawa Taro
Central Research Laboratory, Hitachi Ltd., Higashi-Koigakubo, Kokubunji, Tokyo 185
関連論文
- Selective Generation of Defects in Polydiacetylene Langmuir-Blodgett Films on Si Substrates as Studied by X-Ray Photoelectron Spectroscopy
- Polymer Dissolution Characteristics of Radiation-Induced Grafted Resist in X-Ray Lithography
- High-Quality Carbon-Doped Boron Nitride Membrane for X-Ray Lithography Mask
- Influence of Oxygen upon Radiation Durability of SiN X-Ray Mask Membranes : Lithography Technology
- Influence of Oxygen upon Radiation Durability of SiN X-ray Mask Membranes
- X-Ray Mask Technology Utilizing an Optical Stepper
- Thermal and Ion-Induced Reactions on a Chlorine-Adsorbed GaAs (100) Surface Studied by Metastable-Atom De-excitation Electron Spectroscopy
- Surface Reaction Induced by Multiply-Charged Ions
- Photon-Stimulated Ion Desorption from Semiconductor Surfaces
- Negative Tone Dry Development of Si-Containing Resists by Laser Ablation
- X-Ray Lithography with a Wet-Silylated and Dry-Developed Resist
- Prevention of Resist Pattern Collapse by Flood Exposure during Rinse Process
- New Dry Surface-Imaging Process for X-Ray Lithography
- Simulation of AZ-PN100 Resist Pattern Fluctuation in X-Ray Lithography, Including Synchrotron Beam Polarization
- Freeze-Drying Process to Avoid Resist Pattern Collapse
- X-ray Mask Technology utilizing an Optical Stepper : X-Ray Lithography
- Photon-Stimulated Ion Desorption Measurement of Organosilicon Resist Reactions in Extreme Ultraviolet Lithography
- Minimization of X-Ray Mask Distortion by Two-Dimensional Finite Element Method Simulation : Lithography Technology
- Minimization of X-Ray Mask Distortion by Two-Dimensional Finite Element Method Simulation
- Trapping and Low-Energy Extraction of Photodissociated Ions of SF_6
- Desorption of Ga and As Atoms from GaAs Surface Induced by Slow Multiply Charged Ar Ions
- Electron Beam Mask Fabrication for MOSLSI's with 1.5 μm Design Rule : A-1: ADVANCED LITHOGRAPHY AND PROCESS
- Resolution Limitation of Proximity X-Ray Lithography Determined by Waveguide Effect
- Evaluation of the Waveguide Effect in Proximity X-Ray Lithography Using an Optical Trace Method
- New Evaluation Approach of Alignment Signal from Resist-Coated Patterns : Lithography Technology
- The Effects of Secondary Electrons form a Silion Substrate on SR X-Ray Lithography : Lithography Technology
- The Effects of Secondary Electrons from a Silion Substrate on SR X-Ray Lithography