Photoluminescenece in P-Doped GaN
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概要
- 論文の詳細を見る
The luminescent properties of a blue emission band observed in P-doped GaN have been studied. The blue band is associated with isolated phosphorus atoms. The peak position and the half-width of this band are respectively 2.88±0.01 eV and 375±5 meV at 4.2K. The peak position shifts monotonically to lower energies as the temperature increases. The temperature dependence of the half-width follows the simple configuration coordinate model. The energy of a local-mode phonon is 50±5 meV. This value agrees with the estimated value on the assumption that a nitrogen atom vibrates against its four nearest gallium atoms neighbours. From the temperature dependence of the emission intensity, the binding energy of a hole to a phosphorus atom is calculated as 280±10 meV.
- 社団法人応用物理学会の論文
- 1979-06-05
著者
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Aoki M
Univ. Tokyo Tokyo Jpn
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Aoki Masaru
Advanced Display Incorporated
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Aoki Masaharu
Department Of Electronic Engineering Faculty Of Engineering The University Of Tokyo
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Aoki Masaharu
Department Of Electric Engineering Science University Of Tokyo
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Ogino Toshio
Department Of Electronic Engineering Faculty Of Engineering The University Of Tokyo
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Ogino Toshio
Department Of Electrical And Computer Engineering Yokohama National University
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Aoki Masaharu
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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Ogino Toshio
Department of Chemistry, Faculty of Education, Niigata University
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Aoki Masaharu
Department of Applied Electronics Engineering, Faculty of Industrial Science and Technology, Yamazaki, Noda-shi, Chiba 278
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