Electrical and Optical Properties of Ge-Doped GaP
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概要
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Germanium-doped GaP crystals were grown from Ga solutions. The electrical and optical properties of the Ge-doped GaP were examined by Hall effect measurements from 65 K to 300 K and by photoluminescence measurements at 4.2 K and 77 K. It was found that the resistivity of the highly Ge-doped GaP was high, because the donor and the acceptor levels of Ge are deep and self-compensated. The temperature dependence of the Hall mobility indicated that the neutral impurity scattering was dominant in the highly Ge-doped GaP. Emission bands at 1.96, 1.93, and 1.81 eV at 77 K were due to the C-Ge, the Zn-Ge, and the Ge-S pair recombinations, respectively, and they were very broad because of strong phonon assisted transitions. In GaP(Zn, O, Ge), the red emission band of the Zn-O pair centers disappeared, and the Zn-Ge pair emission became dominant.
- 社団法人応用物理学会の論文
- 1974-01-05
著者
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Aoki Masaharu
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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TAJIMA Michio
Department of Electronic Engineering Faculty of Engineering, University of Tokyo
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Tajima Michio
Department Of Electronic Engineering Faculty Of Engineering University Of Tokyo
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