Shapes of Pair Spectra Involving the Ge-Acceptor in GaP
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概要
- 論文の詳細を見る
The photoluminescence spectra of pair emission bands between the deep Go-acceptor and one of the donors of Si, Te, Se, S, or Ge have been measured at liquid heliuun temperature. These emission spectra are dominated by several phonon sidebands, which form a broad emission band as a whole by overlapping each other. In order to explain the spectral shape of the broad band "overlapping-bands model" has been proposed on the basis of the configura-Lion coordinate model. The parameters S and w in the model, which represent the measure of the strength of the impurity-lattice interaction and the half-width of the phonon sideband, respectively, are properly determined by fitting the theoretical spectra to the observed spectra. The results of these analyses show that S and w become larger for deeper impurity energy levels.This indicates that the impurity-lattice interaction is stronger for deeper impurity energy levels.
- 社団法人応用物理学会の論文
- 1975-11-05
著者
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Aoki Masaharu
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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TAJIMA Michio
Department of Electronic Engineering Faculty of Engineering, University of Tokyo
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Tajima Michio
Department Of Electronic Engineering Faculty Of Engineering University Of Tokyo:(present Address)ele
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Tajima Michio
Department Of Electronic Engineering Faculty Of Engineering University Of Tokyo
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