Temperature Dependences of Pair Emission Bands in GaP : Ge
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概要
- 論文の詳細を見る
The temperature dependence of the pair luminescence was measured at temperatures between 2 K and 300 K for the GaP crystals doped with Ge and p-type impurities. The relation between the emission intensity I of the pair band and the temperature T, when plotted in a log I vs. 1/T curve, consists of three straight lines marked by two kinks. At higher temperatures, log I increases linearly with 1/T with two different gradients. The activation energies were found close to the ionization energies of the donor and acceptor of the pair band. At lower temperatures, I is nearly constant. A simple model of the thermal quenching is proposed, in which the nonradiative recombination process is assumed to originate in the thermal release of the carriers trapped by the donors and acceptors. This model accounts for the most of the above-mentioned characteristics.
- 社団法人応用物理学会の論文
- 1974-05-05
著者
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Aoki Masaharu
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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TAJIMA Michio
Department of Electronic Engineering Faculty of Engineering, University of Tokyo
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Tajima Michio
Department Of Electronic Engineering Faculty Of Engineering University Of Tokyo
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