Relationship between Surface Treatment of ZuTe Substrates and Morphology of CdSe Epitaxial Layers in Liquid Phase Epitaxy
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概要
- 論文の詳細を見る
The epitaxial layers of CdSe were grown on ZnTe at 560°C by liquid phase epitaxy (LPE) from a Te solution in an open tube apparatus. The morphology of the grown layer was greatly influenced by the smoothness of the substrate surface. The effects of the meltback solution and the chemical etchant on the morphology of the grown layer were investigated. The layer grown with the Cd$+$Zn alloy as a meltback solution had a smooth and flat surface without hollows between the grown layer and the substrate, although there were some hollows near the interface with Te meltback or without meltback. Chemical etching of the substrate also affected the morphology of the grown layer. Etching with a mixture solution of K2Cr2O7 and HNO3 caused the surface of the ZnTe substrate to become mirrorlike and resulted in the growth of CdSe layers with smoother surfaces.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-09-20
著者
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Sano Masatoshi
Department Of Electrical Engineering Faculty Of Engineering Science University Of Tokyo
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Aoki Masaharu
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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Yamada Toru
Department Of Adaptive Machine Systems Graduate School Of Engineering Osaka University
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Sano Masatoshi
Department of Electrical Engineering, Faculty of Engineering, Science University of Tokyo, Kagurazaka, Shinjuku, Tokyo 162
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Onome Suguru
Department of Electrical Engineering, Faculty of Engineering, Science University of Tokyo, Kagurazaka, Shinjuku, Tokyo 162
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Aoki Masaharu
Department of Applied Electronics Engineering, Faculty of Industrial Science and Technology, Yamazaki, Noda-shi, Chiba 278
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