Liquid-Phase Epitaxial Growth of ZnS, ZnSe and Their Mixed Compounds Using Te as Solvent
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概要
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Epitaxial layers of ZnS, ZnSe and their mixed compounds were grown on ZnS substrates by the liquid-phase epitaxial growth (LPE) method using Te as the solvent. The open-tube slideboat technique was used, and a suitable starting temperature for growth was found to be 850℃ for ZnS and 700-800℃ for ZnSe. The ZnS epitaxial layers grown on {111}A and {111}B oriented ZnS substrates were thin (∼1 μm) and smooth, had low, uniform Te concentrations (∼0.1 at. %) and were highly luminescent. The ZnSe epitaxial layers were relatively thick (10-30 μm) and had fairly high Te concentrations (a few at. %). Various mixed compound ZnS_<1-x>Se_x were also grown on ZnS substrates.
- 社団法人応用物理学会の論文
- 1981-01-05
著者
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NAKAMURA Hiroshi
Department of Analytical Chemistry, Faculty of Pharmaceutical Sciences, Science University of Tokyo
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Aoki Masaharu
Department Of Electric Engineering Science University Of Tokyo
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