Estimation of Extreme Ultraviolet Power and Throughput for Extreme Ultraviolet Lithography
スポンサーリンク
概要
- 論文の詳細を見る
Extreme ultraviolet (EUV) power and wafer throughput were estimated based on a scanning imaging system. The EUV power on a mask was estimated from the number of reflective mirrors, their reflectivity, resist sensitivity, scanning speed and exposure time. Wafer throughput was estimated for one-way scanning exposure. The EUV power required for a given wafer throughput was determined. For a given acceleration of the mask stage and scanning length, there is an optimal scanning speed that yields the maximum throughput. Assuming an exposure time of 0.1 s and a resist sensitivity of 5 mJ/cm2, the estimated EUV power on a mask is about 10 W@. For a scanning speed of 100 cm/s and a stage acceleration of $3\times g$, the resultant throughput should be 80 or more. The present analysis has shown that a high EUV power is required to obtain the same throughput as that of optical lithography.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2001-07-15
著者
-
Ota Kazuya
Aset Euvl Laboratory
-
Chiba Akira
Aset (association Of Super-advanced Electronics Technologies) Euv Process Technology Research Labora
-
OKAZAKI Shinji
ASET EUVL Laboratory
-
OGAWA Taro
ASET EUV Laboratory
-
Ogawa Taro
ASET EUVL Laboratory, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Ota Kazuya
ASET EUVL Laboratory, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
関連論文
- Improvement of Field Emission Characteristics by Fabricating Aligned Open-Edged Particle-Free Carbon Nanotubes : Semiconductors
- Metal Nanocrystals Grown by Vacuum Deposition on Aligned Carbon Nanotubes
- Measurement of Temperature Rise of Quartz Plate during Synchrotron Radiation Irradiation Using Infrared Camera(Instrumentation, Measurement, and Fabrication Technology)
- Heat Sink Dependency of Mask In-Plane Displacement for Extreme Ultraviolet Lithography
- Assessment of Heat Deformation and Throughput for Selecting Mask Substrate Material for Extreme Ultraviolet Lithography
- Modeling of In-Plane Distortion of Extreme Ultraviolet Lithography Mask in Flat State
- Thermal In-Plane Distortion Model of Mask for Extreme Ultraviolet Lithography during Periodic Scanning Exposure
- Approach to Patterning of Extreme Ultraviolet Lithography Masks using Ru Buffer Layer : Surfaces, Interfaces, and Films
- Thermal Behavior along Depth of Extreme Ultraviolet Lithography Mask during Dry Etching : Surfaces, Interfaces, and Films
- Temperature Rise of Extreme Ultraviolet Lithography Mask Substrate during Dry Etching Process : Semiconductors
- Estimation of Extreme Ultraviolet Power and Throughput for Extreme Ultraviolet Lithography
- Theoretical Analysis of Placement Error due to Absorber Pattern on Extreme Ultraviolet Lithography Mask
- Correlation of Nano Edge Roughness in Resist Patterns with Base Polymers
- Optical Performance of KrF Excimer Laser Lithography with Phase Shift Mask for Fabrication of 0.15 μm and Below
- Transmission Electron Microscopy Observation and Simulation Analysis of Defect-Smoothing Effect of Molybdenum/Silicon Multilayer Coating for Extreme Ultraviolet Lithography Masks
- Metallic Nanocrystals Formation from Metal-Oxide Nanocrystals via Evaporation Process
- Intensity Variation of Transition Radiation Induced by Adsorption of Nitrogen on W(100) Surface
- Emission of Radiation Induced by Bombardment of Slow Electrons from a Clean (100) Surface of Tungsten
- New Alignment Sensors for Optical Lithography : Lithography Technology
- New Alignment Sensors for Optical Lithography
- Production of 35 keV, 1 A Steady-State Ion Beam
- 3D-Computer Simulation of Ion-Beam Deflection Caused by the Displacement of Extraction Electrodes
- Nanofabrication with Langmuir-Blodgett Films of a Chemical Amplification Resist SAL601
- Formation of Fractionated Novolak Resin Langmuir-Blodgett Films
- Fabrication of 0.1μm Complementary Metal-Oxide-Semiconductor Devices : Micro/nanofabrication and Devices
- Fabrication of 0.1μm Complementary Metal-Oxide-Semiconductor Devices
- Heuristic Method for Phase-Conflict Minimization in Automatic Phase-Shift Mask Design
- Analysis of Nonplanar Topography Effects of Phase Shift Masks on Imaging Characteristics
- 0.13 μm Pattern Delineation Using KrF Excimer Laser Light
- Algorithm for Phase-Shift Mask Design with Priority on Shifter Placement
- Phase-Shifting Technology for ULSI Patterning (Special Issue on Opto-Electronics and LSI)
- Design of Phase-Shift Masks in Extreme Ultraviolet Lithography
- Estimation of Mask Placement Error Caused by Multilayer Stress Profile
- Pattern Printability for Variation in Thickness of a Mo/Si Mask Blank in Extreme Ultraviolet Lithography
- Proposal for the Coma Aberration Dependent Overlay Error Compensation Technology
- Theoretical Analysis of Placement Error due to Absorber Pattern on Extreme Ultraviolet Lithography Mask
- Pattern Printability for Variation in Thickness of a Mo/Si Mask Blank in Extreme Ultraviolet Lithography
- Heat Sink Dependency of Mask In-Plane Displacement for Extreme Ultraviolet Lithography
- Measurement of Temperature Rise of Quartz Plate during Synchrotron Radiation Irradiation Using Infrared Camera
- Estimation of Extreme Ultraviolet Power and Throughput for Extreme Ultraviolet Lithography
- Estimation of Mask Placement Error Caused by Multilayer Stress Profile