Theoretical Analysis of Placement Error due to Absorber Pattern on Extreme Ultraviolet Lithography Mask
スポンサーリンク
概要
- 論文の詳細を見る
The pattern placement accuracy of an extreme ultraviolet lithography (EUVL) mask strongly depends on the stresses present in the multilayer and absorber films, since film stress causes both out-of-plane and in-plane distortions. To analyze this elastic deformation, we have developed simulation models that handle the interaction between the multilayer and absorber patterns. The models are based on two-dimensional theories of bending plates and plane stress. The numerical calculations employ the finite difference method and the successive over-relaxation method. To examine the validity and accuracy of the models, the deformation of EUVL masks using simple absorber patterns was calculated. For the calculations, we assumed a standard 6 inch quartz substrate with a reflective coating. The influence of the absorber pattern on placement error was investigated by simulations, and it was found that the absorber pattern is the main factor determining the pattern placement accuracy of an EUVL mask.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-06-15
著者
-
Chiba Akira
Aset (association Of Super-advanced Electronics Technologies) Euv Process Technology Research Labora
-
YAMANASHI Hiromasa
ASET EUVL Laboratory
-
HOKO Hiromasa
ASET EUVL Laboratory
-
OGAWA Tarou
ASET EUVL Laboratory
-
HOSHINO Eiichi
ASET EUV Laboratory
-
TAKAHASHI Masashi
ASET EUV Laboratory
-
LEE Byoung
ASET EUV Laboratory
-
ITO Masaaki
ASET EUV Laboratory
-
HIRANO Naoya
ASET EUVL Laboratory
-
OKAZAKI Sinji
ASET EUVL Laboratory
-
Lee Byoung
ASET EUVL Laboratory, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Hoshino Eiichi
ASET EUVL Laboratory, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Ogawa Tarou
ASET EUVL Laboratory, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Chiba Akira
ASET EUVL Laboratory, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Okazaki Sinji
ASET EUVL Laboratory, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Yamanashi Hiromasa
ASET (Association of Super-Advanced Electronics Technologies), EUV Process Technology Research Laboratory, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
関連論文
- Back-end Integration of Pt/BST/Pt Capacitor for ULSI DRAM Applications
- Back-end Integration of Pt/BST/Pt Capacitor for ULSI DRAM Applications
- Deposition Characteristics of (Ba, Sr)TiO_3 Thin Films by Liquid Source Metal-Organic Chemical Vapor Deposition at Low Substrate Temperatures
- Variation of Electrical Conduction Phenomena of Pt/(Ba, Sr)TiO_3/Pt Capacitors by Different Top Electrode Formation Processes
- A Process Integration of (Ba, Sr) TiO_3 Capacitor into 256M DRAM
- Measurement of Temperature Rise of Quartz Plate during Synchrotron Radiation Irradiation Using Infrared Camera(Instrumentation, Measurement, and Fabrication Technology)
- Ring-Field Extreme Ultraviolet Exposure System Using Aspherical Mirrors
- Preparation and Electrical Properties of SrTiO3 Thin Films Deposited by Liquid Source Metal-Organic Chemical Vapor Deposition (MOCVD)
- Structural and Electrical Properties of Ba_Sr_TiO_3 Films on Ir and IrO_2 Electrodes
- Preparation and Characterization of Iridium Oxide Thin Films Grown by DC Reactive Sputtering
- Heat Sink Dependency of Mask In-Plane Displacement for Extreme Ultraviolet Lithography
- Assessment of Heat Deformation and Throughput for Selecting Mask Substrate Material for Extreme Ultraviolet Lithography
- Modeling of In-Plane Distortion of Extreme Ultraviolet Lithography Mask in Flat State
- Thermal In-Plane Distortion Model of Mask for Extreme Ultraviolet Lithography during Periodic Scanning Exposure
- Approach to Patterning of Extreme Ultraviolet Lithography Masks using Ru Buffer Layer : Surfaces, Interfaces, and Films
- Thermal Behavior along Depth of Extreme Ultraviolet Lithography Mask during Dry Etching : Surfaces, Interfaces, and Films
- Temperature Rise of Extreme Ultraviolet Lithography Mask Substrate during Dry Etching Process : Semiconductors
- Estimation of Extreme Ultraviolet Power and Throughput for Extreme Ultraviolet Lithography
- Theoretical Analysis of Placement Error due to Absorber Pattern on Extreme Ultraviolet Lithography Mask
- Transmission Electron Microscopy Observation and Simulation Analysis of Defect-Smoothing Effect of Molybdenum/Silicon Multilayer Coating for Extreme Ultraviolet Lithography Masks
- Photon-Stimulated Ion Desorption Measurement of Organosilicon Resist Reactions in Extreme Ultraviolet Lithography
- Design of Phase-Shift Masks in Extreme Ultraviolet Lithography
- Estimation of Mask Placement Error Caused by Multilayer Stress Profile
- Pattern Printability for Variation in Thickness of a Mo/Si Mask Blank in Extreme Ultraviolet Lithography
- Theoretical Analysis of Placement Error due to Absorber Pattern on Extreme Ultraviolet Lithography Mask
- Pattern Printability for Variation in Thickness of a Mo/Si Mask Blank in Extreme Ultraviolet Lithography
- Heat Sink Dependency of Mask In-Plane Displacement for Extreme Ultraviolet Lithography
- Measurement of Temperature Rise of Quartz Plate during Synchrotron Radiation Irradiation Using Infrared Camera
- Estimation of Extreme Ultraviolet Power and Throughput for Extreme Ultraviolet Lithography
- Estimation of Mask Placement Error Caused by Multilayer Stress Profile