Assessment of Heat Deformation and Throughput for Selecting Mask Substrate Material for Extreme Ultraviolet Lithography
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-11-15
著者
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CHIBA Akio
Waseda University
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Chiba Akira
Euv Process Technology Research Laboratory Association Of Super-advanced Electronics Technologies (a
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Chiba Akira
Aset (association Of Super-advanced Electronics Technologies) Euv Process Technology Research Labora
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YAMANASHI Hiromasa
ASET EUVL Laboratory
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NISHIYAMA Iwao
ASET EUVL Laboratory
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Nishiyama Iwao
Euv Process Technology Research Laboratory Association Of Super-advanced Electronics Technologies (a
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Nishiyama Iwao
Aset (association Of Super-advanced Electronics Technologies) Euv Process Technology Research Labora
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Chiba A
Euv Process Technology Research Laboratory Association Of Super-advanced Electronics Technologies (a
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SUGAWARA Minoru
ASET EUV Process Technology Laboratory
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Sugawara Minoru
Euv Process Technology Research Laboratory Association Of Super-advanced Electronics Technologies (a
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Sugawara Minoru
Aset Euv Laboratory
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Yamanashi H
Aset Euvl Laboratory
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Sugawara Minoru
ASET (Association of Super-Advanced Electronics Technologies), EUV Process Technology Research Laboratory, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Yamanashi Hiromasa
ASET (Association of Super-Advanced Electronics Technologies), EUV Process Technology Research Laboratory, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
関連論文
- Ferroelectric Behavior in the Copolymer of Vinylidenefluoride and Trifluoroethylene
- Measurement of Temperature Rise of Quartz Plate during Synchrotron Radiation Irradiation Using Infrared Camera(Instrumentation, Measurement, and Fabrication Technology)
- Ring-Field Extreme Ultraviolet Exposure System Using Aspherical Mirrors
- Heat Sink Dependency of Mask In-Plane Displacement for Extreme Ultraviolet Lithography
- Alternating Phase Shift Mask in Extreme Ultra Violet Lithography
- Assessment of Heat Deformation and Throughput for Selecting Mask Substrate Material for Extreme Ultraviolet Lithography
- Modeling of In-Plane Distortion of Extreme Ultraviolet Lithography Mask in Flat State
- Thermal In-Plane Distortion Model of Mask for Extreme Ultraviolet Lithography during Periodic Scanning Exposure
- Approach to Patterning of Extreme Ultraviolet Lithography Masks using Ru Buffer Layer : Surfaces, Interfaces, and Films
- Thermal Behavior along Depth of Extreme Ultraviolet Lithography Mask during Dry Etching : Surfaces, Interfaces, and Films
- Temperature Rise of Extreme Ultraviolet Lithography Mask Substrate during Dry Etching Process : Semiconductors
- Estimation of Extreme Ultraviolet Power and Throughput for Extreme Ultraviolet Lithography
- Theoretical Analysis of Placement Error due to Absorber Pattern on Extreme Ultraviolet Lithography Mask
- Lamellar Structure in Melted-Slowly Cooled Vinylidene Fluoride/Trifluoroethylene (86/14) mol% Copolymer
- Macrostructure of Melt-Crystallized Vinylidene Fluoride/Trifluoroethylene Copolymers (37/63, 65/35, 73/27 mol%)
- Effect of Helium Gas Pressure on X-Ray Mask Heating during Synchrotron Radiation Exposure
- Wafer Temperature Measurement and X-Ray Mask Temperature Evaluation in Synchrotron Radiation Lithography
- Transmission Electron Microscopy Observation and Simulation Analysis of Defect-Smoothing Effect of Molybdenum/Silicon Multilayer Coating for Extreme Ultraviolet Lithography Masks
- Photon-Stimulated Ion Desorption Measurement of Organosilicon Resist Reactions in Extreme Ultraviolet Lithography
- Design of Phase-Shift Masks in Extreme Ultraviolet Lithography
- Estimation of Mask Placement Error Caused by Multilayer Stress Profile
- Pattern Printability for Variation in Thickness of a Mo/Si Mask Blank in Extreme Ultraviolet Lithography
- Investigation of Switching Characteristics of Vinylidene Fluoride/Trifluoroethylene Copolymers in Relation to Their Structures
- Ferroelectric Relaxation in a 65/35 mol% Copolymer of Vinylidene Fluoride and Trifluoroethylene
- Alternating Phase Shift Mask in Extreme Ultra Violet Lithography
- Theoretical Analysis of Placement Error due to Absorber Pattern on Extreme Ultraviolet Lithography Mask
- Pattern Printability for Variation in Thickness of a Mo/Si Mask Blank in Extreme Ultraviolet Lithography
- Heat Sink Dependency of Mask In-Plane Displacement for Extreme Ultraviolet Lithography
- Measurement of Temperature Rise of Quartz Plate during Synchrotron Radiation Irradiation Using Infrared Camera
- Estimation of Extreme Ultraviolet Power and Throughput for Extreme Ultraviolet Lithography
- Estimation of Mask Placement Error Caused by Multilayer Stress Profile