Heat Sink Dependency of Mask In-Plane Displacement for Extreme Ultraviolet Lithography

概要

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Modeling of contact state at the interface of an extreme ultraviolet (EUV) mask and a chuck stage is proposed for systematic investigation of thermal in-plane displacement (IPD) of the EUV mask. The contact surface of the chuck stage is assumed to be the heat sink. In order to simulate the thermal IPD of EUV mask during the scanning exposure process, the three-dimensional thermal equation and two-dimensional displacement equations based on plane stress theory are used. The finite difference method is used for the numerical procedure. The relationship between the contact distribution at the interface and the thermal IPD of EUV mask is investigated. Even if the patterned area is not in contact with the heat sink, the peak IPD of less than 0.5 nm is guaranteed under the condition of the mask frame being in contact with the heat sink with a heat transfer coefficient of 1 W/cm2K. For achieving the mask placement error of less than 1 nm, a heat sink with high thermal conductivity is required for the chuck stage.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2003-06-15