New Alignment Sensors for Optical Lithography
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-11-20
著者
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Ota Kazuya
Aset Euvl Laboratory
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Ota Kazuya
System Designing Section Designing Department Industrial Supplies & Equipment Division Nikon Cor
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NISHI Kazuhisa
Free Electron Laser Research Institute, Inc.
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Ota K
Univ. Tsukuba Ibaraki Jpn
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MAGOME Nobutaka
System Designing Section, Designing Department, Industrial Supplies & Equipment Division, Nikon Corp
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NISHI Kenji
System Designing Section, Designing Department, Industrial Supplies & Equipment Division, Nikon Corp
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Nishi K
Semiconductor Leading Edge Technol. Inc. Yokohama Jpn
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Magome Nobutaka
System Designing Section Designing Department Industrial Supplies & Equipment Division Nikon Cor
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Ota Keishin
Tsukuba Advanced Research Alliance Center University Of Tsukuba
関連論文
- Improvement of Field Emission Characteristics by Fabricating Aligned Open-Edged Particle-Free Carbon Nanotubes : Semiconductors
- Metal Nanocrystals Grown by Vacuum Deposition on Aligned Carbon Nanotubes
- Measurement of Semiconductor Heterojunction Band Discontinuities Using Free Electron Laser
- Measurement of Semiconductor Heterojunction Band Discontinuity by Free Electron Laser
- Measurement of Band Discontinuity at ZnSe/GaAs Boundary Using Free Electron Laser
- Free Electron Laser Annealing of Amorphous Silicon Carbide
- Modeling of In-Plane Distortion of Extreme Ultraviolet Lithography Mask in Flat State
- Thermal In-Plane Distortion Model of Mask for Extreme Ultraviolet Lithography during Periodic Scanning Exposure
- Estimation of Extreme Ultraviolet Power and Throughput for Extreme Ultraviolet Lithography
- Metallic Nanocrystals Formation from Metal-Oxide Nanocrystals via Evaporation Process
- Intensity Variation of Transition Radiation Induced by Adsorption of Nitrogen on W(100) Surface
- Emission of Radiation Induced by Bombardment of Slow Electrons from a Clean (100) Surface of Tungsten
- New Alignment Sensors for Optical Lithography : Lithography Technology
- New Alignment Sensors for Optical Lithography
- Production of 35 keV, 1 A Steady-State Ion Beam
- 3D-Computer Simulation of Ion-Beam Deflection Caused by the Displacement of Extraction Electrodes
- Evaluation of the Semiconductor Heterojunctions Interface Using a Free Electron Laser
- Method for Evaluating the Interface of Semiconductor Heterojunctions Using a Free Electron Laser
- Estimation of Extreme Ultraviolet Power and Throughput for Extreme Ultraviolet Lithography