Method for Evaluating the Interface of Semiconductor Heterojunctions Using a Free Electron Laser
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概要
- 論文の詳細を見る
The method for evaluating the interface of semiconductor heterojunctions using the free electron laser internal photoemission (FEL-IPE) technique is presented. The nature of the interface in semiconductor heterojunctions plays an important role for determining the behavior and performances of an entire class of nanosemiconductor devices. It is indicated that the measurement using FEL-IPE makes it possible to determine the band discontinuities of semiconductor heterojunctions more precisely.
- 社団法人応用物理学会の論文
- 1998-12-30
著者
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NISHI Kazuhisa
Free Electron Laser Research Institute, Inc.
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Nishi K
Semiconductor Leading Edge Technol. Inc. Yokohama Jpn
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Tomimasu Takio
Free Electron Laser Research Institue Inc.
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Ishizu A
Free Electron Laser Research Institute Inc.
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NAGAI Akio
Research Laboratories, Toyama Chemical Co., Ltd.
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Ishizu Akira
Free Electron Laser Research Institute Inc.
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Nagai Akio
Research Laboratories Toyama Chemical Co. Ltd.
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NAGAI Akio
Free Electron Laser Research Institute, Inc.
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