Yamanaka Toshio | The Graduate School Of Advanced Sciences Of Matter Hiroshima University:texas Instruments Japan Limi
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概要
- 同名の論文著者
- The Graduate School Of Advanced Sciences Of Matter Hiroshima University:texas Instruments Japan Limiの論文著者
関連著者
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Yamanaka Toshio
The Graduate School Of Advanced Sciences Of Matter Hiroshima University:texas Instruments Japan Limi
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Yamanaka T
Renesas Device Design
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YAMANAKA Toshiaki
Central Research Laboratory, Hitachi, Ltd.
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Yamanaka T
Hiroshima Univ. Higashi‐hiroshima Jpn
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Yamanaka Toshiaki
Central Research Laboratory Hitachi Ltd.
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NAGATA Makoto
Department of Computer and Systems Engineering, Kobe University
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Iwata A
Hiroshima Univ. Higashi-hiroshima‐shi Jpn
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Morie T
Graduate School Of Life Science And Systems Engineering Kyushu Institute Of Technology
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Nishida Takashi
Central Research Laboratory Hitachi Ltd.
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ISHIBASHI Koichiro
Central Research Laboratory, Hitachi, Ltd.
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IWADE Shuhei
Osaka Institute of Technology
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IWATA Atsushi
A-R-Tec Corporation
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TAKATA Hidehiro
Renesas Technology
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AKIYAMA Rei
Renesas Device Design
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Nagata M
Department Of Computer And Systems Engineering Kobe University
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Ishibashi K
Riken Wako‐shi Jpn
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Ishibashi Koichiro
Central Research Laboratory Hitachi Ltd.
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Nagano Takahiro
Semiconductor And Integrated Circuits Division Hitachi Ltd.
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Shibagaki Takeshi
Renesas Technology
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Morie Takashi
Faculty Of Engineering Kyoto University
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HASHIMOTO Naotaka
Semiconductor & Integrated Circuits Division, Hitachi Ltd.
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OHKI Nagatoshi
Hitachi ULSI Engineering Corp.
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SHIMIZU Akihiro
Hitachi ULSI Engineering Corp.
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NAGANO Takahiro
Semiconductor and Integrated Circuits Division, Hitachi, Ltd.
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Komiyaji Kunihiro
Central Research Laboratory, Hitachi Ltd.
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SHIMADA Takahiro
Renesas Technology
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NAGATA Makoto
Faculty of Engineering, Hiroshima University
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IWATA Atsushi
Faculty of Engineering, Hiroshima University
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YAMANAKA Toshio
Faculty of Engineering, Hiroshima University
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KURAFUJI Takashi
Renesas Technology
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IWABU Atsushi
Renesas Device Design
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YASUDA Shutarou
Renesas Device Design
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NUNOMURA Yasuhiro
Renesas Technology
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ITOH Niichi
Renesas Technology
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KAGEMOTO Tetsuya
Renesas Technology
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YOSHIOKA Nobuharu
Renesas Technology
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ARAKAWA Takahiko
Renesas Technology
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Iwata Atsushi
Faculty Of Engineering Hiroshima University
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Iwata Atsushi
Electronic Materials And Devices Division Mitsubishi Petrochemical Co. Ltd.
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Nagano Tomohiro
Department Of Physics Faculty Of Sciense And Technology Science University Of Tokyo
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Itoh N
Semiconductor Company Toshiba Corporationthe Authors Are With Semiconductor Company Toshiba Corporat
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Shimizu A
Kochi Univ. Technol. Kochi‐ken Jpn
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Shimizu A
Hitachi Ulsi Engineering Corp.
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Shimizu Akihiro
東京工業高等専門学校
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Shimada T
Renesas Technol. Itami‐shi Jpn
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Takata H
Renesas Technology
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SHIMIZU Akihiro
Kochi University of Technology
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KOMIYAJI Kunihiro
Semiconductor amp Integrated Circuits Division, Hitachi, Ltd.
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Komiyaji Kunihiro
Semiconductor Amp Integrated Circuits Division Hitachi Ltd.
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Nagata Makoto
Faculty Of Engineering Hiroshima University
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Hashimoto Takashi
Central Research Laboratory Hitachi Ltd.
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HARADA Ayako
Faculty of Pharmaceutical Sciences, Teikyo University
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Notani H
System Lsi Laboratory Mitsubishi Electric Corporation
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Notani Hiromi
Renesas Technology
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Notani Hiromi
Lsi Laboratory Mitsubishi Electric Corporation
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Kure T
Hitachi Ltd. Tokyo Jpn
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Kure Tokuo
Hitachi Central Research Laboratory
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Wada Tetsuro
System Lsi Development Center Mitsubishi Electric Corporation
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Yamanaka Takeshi
Faculty of Pharmaceutical Sciences, Osaka University
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Notani H
Renesas Technology
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Aoki Masaaki
Central Research Laboratory Hitachi Ltd.
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Makino Hiroshi
Renesas Technology Corporation
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Matsuda Yoshio
System Lsi Laboratory Mitsubishi Electric Corporation
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IKEDA Shuji
Semiconductor & Integrated Circuits Division, Hitachi Ltd.
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NAGANO Takahiro
Central Research Laboratory, Hitachi, Ltd.
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MINAMI Masataka
Semiconductor and Integrated Circuits Division, Hitachi, Ltd.
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ISHIDA Hiroshi
Hitachi ULSI Engineering Corp.
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SATOH Akira
Hitachi ULSI Engineering Corp.
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NISHIDA Takashi
Semiconductor and Integrated Circuits Division, Hitachi, Ltd.
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HASHIMOTO Takashi
Semiconductor and Integrated Circuits Division, Hitachi, Ltd.
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Takasugi Koichi
Semiconductor and Integrated Circuit Division, Hitachi Ltd.
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Toyoshima Hiroshi
Hitachi VLSI Engineering Co., Ltd.
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Fukami Akira
Central Research Laboratory, Hitachi Ltd.
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Hashimoto Takashi
Central Research Laboratory, Hitachi Ltd.
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Ikeda Shuji
Semiconductor And Integrated Circuit Division Hitachi Ltd.
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Ikeda Shuji
Semiconductor & Integrated Circuits Div. Hitachi Ltd.
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Yoshimoto Masahiko
Mitsubishi Electric Corporation
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NAKASE Yasunobu
Renesas Technology
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YAMADA Akira
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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NUNOMURA Yasuhiro
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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SUZUKI Hiroaki
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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SATO Hisakazu
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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ITOH Niichi
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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KAGEMOTO Tetsuya
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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ITO Hironobu
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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KURAFUJI Takashi
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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YOSHIOKA Nobuharu
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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NAKANISHI Jingo
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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NOTANI Hiromi
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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AKIYAMA Rei
The authors are with Electric Devices Design Center, Mitsubishi Electric Engineering Corporation
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IWABU Atsushi
The authors are with Electric Devices Design Center, Mitsubishi Electric Engineering Corporation
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YAMANAKA Tadao
The authors are with Electric Devices Design Center, Mitsubishi Electric Engineering Corporation
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TAKATA Hidehiro
The authors are with Electric Devices Design Center, Mitsubishi Electric Engineering Corporation
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SHIBAGAKI Takeshi
The author is with System LSI Division, Mitsubish Electric Corporation
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ARAKAWA Takahiko
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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MAKINO Hiroshi
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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TOMISAWA Osamu
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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IWADE Shuhei
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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TAKATA Hidehiro
System LSI Development Center,Mitsubishi Electric Corporation
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AKIYAMA Rei
Electronic Devices Design Center, Mitsubishi Electric Engineering Corporation
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YAMANAKA Tadao
Electronic Devices Design Center, Mitsubishi Electric Engineering Corporation
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OHKUMA Haruyuki
Electronic Devices Design Center, Mitsubishi Electric Engineering Corporation
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SUETSUGU Yasue
Electronic Devices Design Center, Mitsubishi Electric Engineering Corporation
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KANAOKA Toshihiro
Electronic Devices Design Center, Mitsubishi Electric Engineering Corporation
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KUMAKI Satoshi
System LSI Development Center,Mitsubishi Electric Corporation
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ISHIHARA Kazuya
System LSI Development Center,Mitsubishi Electric Corporation
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HANAMI Atsuo
System LSI Development Center,Mitsubishi Electric Corporation
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MATSUMURA Tetsuya
System LSI Development Center,Mitsubishi Electric Corporation
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WATANABE Tetsuya
System LSI Development Center,Mitsubishi Electric Corporation
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AJIOKA Yoshihide
System LSI Division, Mitsubishi Electric Corporation
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IWADE Syuhei
System LSI Development Center,Mitsubishi Electric Corporation
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Yamanaka Takeshi
Faculty Of Pharmaceutical Sciences Osaka University
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Nakase Yasunobu
The System Lsi Laboratory Mitsubishi Electric Corporation
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Kure Tokuo
Hitachi Ulsi Engineering Corp.
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Harada Ayako
Reproductive Pediatric And Infectious Science Yamaguchi University School Of Medicine
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Harada Ayako
Faculty Of Pharmaceutical Sciences Teikyo University
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Harada Ayako
Information Technology R&d Center Mitsubishi Electric Corporation
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Harada Ayako
Department Of Molecular Biodynamics The Tokyo Metropolitan Institute Of Medical Science (rinshoken)
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Makino H
Mitsubishi Electric Corp. Itami‐shi Jpn
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YAMANAKA Toshio
the Graduate School of Advanced Sciences of Matter, Hiroshima University
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MORIE Takashi
the Graduate School of Advanced Sciences of Matter, Hiroshima University
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NAGATA Makoto
the Graduate School of Advanced Sciences of Matter, Hiroshima University
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IWATA Atsushi
the Graduate School of Advanced Sciences of Matter, Hiroshima University
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KANEDA KAZUFUMI
Faculty of Engineering Hiroshima University
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NAKAMAE EIHACHIRO
Department of Management and Information Hiroshima Prefectural University
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IMAMURA Yukinaga
Renesas Device Design
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YAMANAKA Tadao
Renesas Device Design
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MIWA Toshitsugu
Renesas Technology
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KONDO Hiroyuki
Renesas Technology
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KOYAMA Masayuki
Renesas Technology
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Nishita Tomoyuki
Faculty Of Engineering Fukuyama University
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Yamashita Hiroki
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Yoshimoto Masahiko
System Lsi Development Center Mitsubishi Electric Corporation
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SATO Hisakazu
Renesas Technology Corporation
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ITO Hironobu
Renesas Technology Corporation
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NAKANISHI Jingo
Renesas Technology Corporation
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Akiyama Rei
Renesas Design Corporation
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Hanami Atsuo
System Lsi Development Center Mitsubishi Electric Corporation
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Fukami Akira
Central Research Laboratory Hitachi Ltd.
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Kojima Fumio
Hitachi Vlsi Engineering Corporation
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Sato Hisakazu
The Authors Are With System Lsi Development Center Mitsubishi Electric Corporation
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Kumaki Satoshi
System Lsi Development Center Mitsubishi Electric Corporation
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Tomisawa Osamu
The Authors Are With System Lsi Development Center Mitsubishi Electric Corporation
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MORITA Sadayuki
Hitachi ULSI Systems Co., Ltd.
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Morita S
Hitachi Ulsi Systems Co. Ltd. Kokubunji‐shi Jpn
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Morita Sadayuki
Hitachi Ulsi Systems Co. Ltd.
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Ishihara Kazuya
System Lsi Development Center Mitsubishi Electric Corporation
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Nishita T
Faculty Of Engineering Fukuyama University
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TAKAHASHI Kentaro
Faculty of Engineering Hiroshima University
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YAMASHITA Hideo
Faculty of Engineering Hiroshima University
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Yoshimoto M
Department Of Computer Science And Systems Engineering Kobe University
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Takata Hidehiro
System Lsi Development Center Mitsubishi Electric Corporation
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Takata Hidehiro
Renesas Technol. Corp. Itami‐shi Jpn
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Yamada A
Wireless Laboratories Ntt Docomo Inc.
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Yamashita H
Hiroshima Univ Higashihiroshima
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Aoto Toshiro
Hitachi VLSI Engineering Corporation
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Asayama Kyoichiro
Semiconductor & IC Division, Hitachi Ltd.
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Koike Atsuyosi
Semiconductor & IC Division, Hitachi Ltd.
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Iida Haruhito
Hitachi VLSI Engineering Corporation
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Motohashi Koichi
Semiconductor & IC Division, Hitachi Ltd.
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Sasaki Katsuro
Hitachi America Ltd.
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Koike Atsuyosi
Semiconductor & Ic Division Hitachi Ltd.
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Ajioka Yoshihide
System Lsi Division Mitsubishi Electric Corporation
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Matsumura T
System Lsi Development Center Mitsubishi Electric Corporation
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Ohkuma Haruyuki
Electronic Devices Design Center Mitsubishi Electric Engineering Corporation
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Watanabe T
Microsystem Integration Laboratories Ntt Corporation
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Minami Masataka
Semiconductor And Integrated Circuits Division Hitachi Ltd.
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Takasugi K
Semiconductor And Integrated Circuit Division Hitachi Ltd.
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Takasugi Koichi
Semiconductor And Integrated Circuit Division Hitachi Ltd.
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Motohashi Koichi
Semiconductor & Ic Division Hitachi Ltd.
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Asayama Kyoichiro
Semiconductor & Ic Division Hitachi Ltd.
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Nakamae E
Hiroshima Prefectural Univ. Shobara‐shi Jpn
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Kanaoka Toshihiro
Electronic Devices Design Center Mitsubishi Electric Engineering Corporation
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Toyoshima Hiroshi
Hitachi Vlsi Engineering Co. Ltd.
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Nagano Takahiro
Central Research Laboratory Hitachi Ltd.
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Matsuda Yoshio
System Lsi Development Center Mitsubishi Electric Corporation
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Suzuki Hiroaki
The Authors Are With System Lsi Development Center Mitsubishi Electric Corporation
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Takata Hidehiro
The Authors Are With Electric Devices Design Center Mitsubishi Electric Engineering Corporation
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Kondo Hiroyuki
Renesas Electronics Corporation
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Takata Hidehiro
Renesas Electronics Corporation
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TOYOSHIMA Hiroshi
Hitachi ULSI Engineering Corporation
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AOKI Masaaki
Central Research Laboratory, Hitachi, Ltd.
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YAMANAKA Takeshi
Faculty of Engineering Hiroshima University
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Nishida Takashi
Central Research Laboratories, Kuraray Co. Ltd.
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NAKASE Yasunobu
Renesas Electronics Corp.
著作論文
- A 6.93-μm^2 Full CMOS SRAM Cell Technology for 1.8-V High-Performance Cache Memory
- Large 1/f Noise in Polysilicon TFT Loads and Its Effects on the Stability of SRAM Cells
- A 6-ns 4-Mb CMOS SRAM with Offset-Voltage-Insensitive Current Sense Amplifiers(Special Issue on the 1994 VLSI Circuits Symposium)
- Signal Integrity Design and Analysis for a 400 MHz RISC Microcontroller
- Physical Design Methodology for On-Chip 64-Mb DRAM MPEG-2 Encoding with a Multimedia Processor(Special Issue on High-Performance and Low-Power Microprocessors)
- A CMOS Stochastic Associative Processor Using PWM Chaotic Signals(Special Issue on Integrated Systems with New Concepts)
- A Stochastic Association Circuit Using PWM Chaotic Signals
- A Stochastic Associative Memory Using Single-Electron Devices and Its Application in Digit Pattern Association
- Selective-Sets Resizable Cache Memory Design for High-Performance and Low-Power CPU Core(Low-Power System LSI, IP and Related Technologies)
- Lighting Design in Interreflective Environments Using Hopfield Neural Networks
- A 12.5-ns 16-Mb CMOS SRAM with Common-Centroid-Geometry-Layout Sense Amplifiers (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))