IWADE Shuhei | Osaka Institute of Technology
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概要
関連著者
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IWADE Shuhei
Osaka Institute of Technology
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Makino Hiroshi
Renesas Technology Corporation
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Makino H
Mitsubishi Electric Corp. Itami‐shi Jpn
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TAKATA Hidehiro
Renesas Technology
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ARAKAWA Takahiko
Renesas Technology
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Notani H
System Lsi Laboratory Mitsubishi Electric Corporation
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Notani Hiromi
Renesas Technology
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Notani Hiromi
Lsi Laboratory Mitsubishi Electric Corporation
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Shibagaki Takeshi
Renesas Technology
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Notani H
Renesas Technology
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SHIMADA Takahiro
Renesas Technology
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NAKASE Yasunobu
Renesas Technology
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Nakase Yasunobu
The System Lsi Laboratory Mitsubishi Electric Corporation
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Yamanaka Toshio
The Graduate School Of Advanced Sciences Of Matter Hiroshima University:texas Instruments Japan Limi
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AKIYAMA Rei
Renesas Device Design
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NUNOMURA Yasuhiro
Renesas Technology
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ITOH Niichi
Renesas Technology
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SATO Hisakazu
Renesas Technology Corporation
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Yamanaka T
Renesas Device Design
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Itoh N
Semiconductor Company Toshiba Corporationthe Authors Are With Semiconductor Company Toshiba Corporat
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Takata H
Renesas Technology
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NAKASE Yasunobu
Renesas Electronics Corp.
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Nii Koji
Renesas Technology Corporation
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Nii K
Renesas Technol. Corp. Itami‐shi Jpn
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NOTANI Hiromi
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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MAKINO Hiroshi
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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TOMISAWA Osamu
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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IWADE Shuhei
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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KURAFUJI Takashi
Renesas Technology
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IWABU Atsushi
Renesas Device Design
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YASUDA Shutarou
Renesas Device Design
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KAGEMOTO Tetsuya
Renesas Technology
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YOSHIOKA Nobuharu
Renesas Technology
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ITO Hironobu
Renesas Technology Corporation
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NAKANISHI Jingo
Renesas Technology Corporation
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IWADE Shuhei
System LSI Development Center,Mitsubishi Electric Corporation
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Tomisawa Osamu
The Authors Are With System Lsi Development Center Mitsubishi Electric Corporation
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Shimada T
Renesas Technol. Itami‐shi Jpn
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Takata Hidehiro
Renesas Technol. Corp. Itami‐shi Jpn
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Yamada A
Wireless Laboratories Ntt Docomo Inc.
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Takata Hidehiro
Renesas Electronics Corporation
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HARADA Ayako
Faculty of Pharmaceutical Sciences, Teikyo University
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Notani Hiromi
Renesas Technol. Corp.
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Wada Tetsuro
System Lsi Development Center Mitsubishi Electric Corporation
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NII Koji
System LSI Development Center, Mitsubishi Electric Corporation
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INOUE Yasuo
ULSI Development Center, Mitsubishi Electric Corporation
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Nii Koji
Renesas Electronics Corporation
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Yoshida K
Renesas Technol. Corp. Itami‐shi Jpn
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Matsuda Yoshio
System Lsi Laboratory Mitsubishi Electric Corporation
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Yoshimoto Masahiko
Mitsubishi Electric Corporation
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MAKINO Hiroshi
System LSI Development Center, Mitsubishi Electric Corporation
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YAMADA Akira
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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NUNOMURA Yasuhiro
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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SUZUKI Hiroaki
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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SATO Hisakazu
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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ITOH Niichi
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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KAGEMOTO Tetsuya
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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ITO Hironobu
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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KURAFUJI Takashi
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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YOSHIOKA Nobuharu
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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NAKANISHI Jingo
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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AKIYAMA Rei
The authors are with Electric Devices Design Center, Mitsubishi Electric Engineering Corporation
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IWABU Atsushi
The authors are with Electric Devices Design Center, Mitsubishi Electric Engineering Corporation
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YAMANAKA Tadao
The authors are with Electric Devices Design Center, Mitsubishi Electric Engineering Corporation
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TAKATA Hidehiro
The authors are with Electric Devices Design Center, Mitsubishi Electric Engineering Corporation
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SHIBAGAKI Takeshi
The author is with System LSI Division, Mitsubish Electric Corporation
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ARAKAWA Takahiko
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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KOYAMA Masayuki
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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MANO Ryuji
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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MATSUDA Yoshio
The author is with High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
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TAKATA Hidehiro
System LSI Development Center,Mitsubishi Electric Corporation
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AKIYAMA Rei
Electronic Devices Design Center, Mitsubishi Electric Engineering Corporation
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YAMANAKA Tadao
Electronic Devices Design Center, Mitsubishi Electric Engineering Corporation
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OHKUMA Haruyuki
Electronic Devices Design Center, Mitsubishi Electric Engineering Corporation
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SUETSUGU Yasue
Electronic Devices Design Center, Mitsubishi Electric Engineering Corporation
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KANAOKA Toshihiro
Electronic Devices Design Center, Mitsubishi Electric Engineering Corporation
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KUMAKI Satoshi
System LSI Development Center,Mitsubishi Electric Corporation
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ISHIHARA Kazuya
System LSI Development Center,Mitsubishi Electric Corporation
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HANAMI Atsuo
System LSI Development Center,Mitsubishi Electric Corporation
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MATSUMURA Tetsuya
System LSI Development Center,Mitsubishi Electric Corporation
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WATANABE Tetsuya
System LSI Development Center,Mitsubishi Electric Corporation
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AJIOKA Yoshihide
System LSI Division, Mitsubishi Electric Corporation
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IWADE Syuhei
System LSI Development Center,Mitsubishi Electric Corporation
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Yoshida Kanako
Renesas Technology Corporation
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Harada Ayako
Reproductive Pediatric And Infectious Science Yamaguchi University School Of Medicine
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Harada Ayako
Faculty Of Pharmaceutical Sciences Teikyo University
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Harada Ayako
Information Technology R&d Center Mitsubishi Electric Corporation
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Harada Ayako
Department Of Molecular Biodynamics The Tokyo Metropolitan Institute Of Medical Science (rinshoken)
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SHIMIZU Toru
Renesas Technology Corp.
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IMAMURA Yukinaga
Renesas Device Design
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YAMANAKA Tadao
Renesas Device Design
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MIWA Toshitsugu
Renesas Technology
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KONDO Hiroyuki
Renesas Technology
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KOYAMA Masayuki
Renesas Technology
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Ipposhi Takashi
Renesas Technology Corp.
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Ipposhi Takashi
Renesas Technology Corporation
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Yoshimoto Masahiko
System Lsi Development Center Mitsubishi Electric Corporation
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KUNIKIYO Tatsuya
ULSI Research and Development Center, Mitsubishi Electric Corporation
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ISHIKAWA Kiyoshi
ULSI Research and Development Center, Mitsubishi Electric Corporation
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Tsukamoto Yasumasa
Renesas Technology Corporation
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YAMADA Akira
Renesas Technology Corporation
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HIRANO Yuichi
Renesas Technology Corporation
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TSUKAMOTO Yasumasa
System LSI Development Center,Mitsubishi Electric Corporation
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KOTANI Norihiko
Hiroshima International University
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Koyama Masayuki
The Authors Are With System Lsi Development Center Mitsubishi Electric Corporation
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Mano Ryuji
The Authors Are With System Lsi Development Center Mitsubishi Electric Corporation
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Akiyama Rei
Renesas Design Corporation
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Hanami Atsuo
System Lsi Development Center Mitsubishi Electric Corporation
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Sato Hisakazu
The Authors Are With System Lsi Development Center Mitsubishi Electric Corporation
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Kumaki Satoshi
System Lsi Development Center Mitsubishi Electric Corporation
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Ishihara Kazuya
System Lsi Development Center Mitsubishi Electric Corporation
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Yoshimoto M
Department Of Computer Science And Systems Engineering Kobe University
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Ishikawa Kiyoshi
Ulsi Development Center Mitsubishi Electric Corporation
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Takata Hidehiro
System Lsi Development Center Mitsubishi Electric Corporation
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Ajioka Yoshihide
System Lsi Division Mitsubishi Electric Corporation
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Matsumura T
System Lsi Development Center Mitsubishi Electric Corporation
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NAKANISHI CHIKAKO
System LSI Development Center, Mitsubishi Electric Corporation
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MINEMATSU ISAO
System LSI Development Center, Mitsubishi Electric Corporation
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SATO HISAKAZU
System LSI Development Center, Mitsubishi Electric Corporation
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NAKAKIMURA KIYOSHI
System LSI Development Center, Mitsubishi Electric Corporation
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ARAKAWA TAKAHIKO
System LSI Development Center, Mitsubishi Electric Corporation
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Minematsu Isao
System Lsi Development Center Mitsubishi Electric Corporation
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Ohkuma Haruyuki
Electronic Devices Design Center Mitsubishi Electric Engineering Corporation
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Watanabe T
Microsystem Integration Laboratories Ntt Corporation
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Kunikiyo Tatsuya
Ulsi Development Center Mitsubishi Electric Corporation
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Nakanishi Chikako
System Lsi Development Center Mitsubishi Electric Corporation
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Kanaoka Toshihiro
Electronic Devices Design Center Mitsubishi Electric Engineering Corporation
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Inoue Yasuo
Ulsi Development Center Mitsubishi Electric Corporation
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Matsuda Yoshio
The Author Is With High Frequency & Optical Semiconductor Division Mitsubishi Electric Corporati
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Matsuda Yoshio
System Lsi Development Center Mitsubishi Electric Corporation
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Suzuki Hiroaki
The Authors Are With System Lsi Development Center Mitsubishi Electric Corporation
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Shimizu Toru
Renesas Technology Corporation
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Shimizu Toru
Renesas Electronics Corporation
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Takata Hidehiro
The Authors Are With Electric Devices Design Center Mitsubishi Electric Engineering Corporation
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Kondo Hiroyuki
Renesas Electronics Corporation
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Shimizu Toru
Renesas Electronics Corp.
著作論文
- A Wide Range 1.0-3.6 V 200 Mbps, Push-Pull Output Buffer Using Parasitic Bipolar Transistors(Low-Power System LSI, IP and Related Technologies)
- Signal Integrity Design and Analysis for a 400 MHz RISC Microcontroller
- A Low Standby Current DSP Core Using Improved ABC-MT-CMOS with Charge Pump Circuit
- Physical Design Methodology for On-Chip 64-Mb DRAM MPEG-2 Encoding with a Multimedia Processor(Special Issue on High-Performance and Low-Power Microprocessors)
- Selective-Sets Resizable Cache Memory Design for High-Performance and Low-Power CPU Core(Low-Power System LSI, IP and Related Technologies)
- A Low-Power Microcontroller with Body-Tied SOI Technology(Low-Power System LSI, IP and Related Technologies)
- Realistic Scaling Scenario for Sub-100 nm Embedded SRAM Based on 3-Dimensional Interconnect Simulation(the IEEE International Conference on SISPAD '02)
- Multimedia Accelerator ACE : A Practical Approach for Multimedia Applications