Signal Integrity Design and Analysis for a 400 MHz RISC Microcontroller
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概要
- 論文の詳細を見る
A high-speed 32-bit RISC microcontroller has been developed. In order to realize high-speed operation with minimum hardware resource, we have developed new design and analysis methods such as a clock distribution, a bus-line layout, and an IR drop analysis. As a result, high-speed operation of 400 MHz has been achieved with power dissipation of 0.96 W at 1.8V.
- 社団法人電子情報通信学会の論文
- 2003-04-01
著者
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Notani H
System Lsi Laboratory Mitsubishi Electric Corporation
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Notani Hiromi
Renesas Technology
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Notani Hiromi
Lsi Laboratory Mitsubishi Electric Corporation
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Shibagaki Takeshi
Renesas Technology
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Notani H
Renesas Technology
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Makino Hiroshi
Renesas Technology Corporation
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SHIMADA Takahiro
Renesas Technology
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IWADE Shuhei
Osaka Institute of Technology
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YAMADA Akira
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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NUNOMURA Yasuhiro
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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SUZUKI Hiroaki
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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SATO Hisakazu
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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ITOH Niichi
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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KAGEMOTO Tetsuya
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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ITO Hironobu
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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KURAFUJI Takashi
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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YOSHIOKA Nobuharu
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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NAKANISHI Jingo
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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NOTANI Hiromi
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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AKIYAMA Rei
The authors are with Electric Devices Design Center, Mitsubishi Electric Engineering Corporation
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IWABU Atsushi
The authors are with Electric Devices Design Center, Mitsubishi Electric Engineering Corporation
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YAMANAKA Tadao
The authors are with Electric Devices Design Center, Mitsubishi Electric Engineering Corporation
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TAKATA Hidehiro
The authors are with Electric Devices Design Center, Mitsubishi Electric Engineering Corporation
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SHIBAGAKI Takeshi
The author is with System LSI Division, Mitsubish Electric Corporation
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ARAKAWA Takahiko
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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MAKINO Hiroshi
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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TOMISAWA Osamu
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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IWADE Shuhei
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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Makino H
Mitsubishi Electric Corp. Itami‐shi Jpn
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Yamanaka Toshio
The Graduate School Of Advanced Sciences Of Matter Hiroshima University:texas Instruments Japan Limi
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KURAFUJI Takashi
Renesas Technology
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TAKATA Hidehiro
Renesas Technology
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AKIYAMA Rei
Renesas Device Design
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IWABU Atsushi
Renesas Device Design
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NUNOMURA Yasuhiro
Renesas Technology
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ITOH Niichi
Renesas Technology
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KAGEMOTO Tetsuya
Renesas Technology
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YOSHIOKA Nobuharu
Renesas Technology
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ARAKAWA Takahiko
Renesas Technology
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SATO Hisakazu
Renesas Technology Corporation
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ITO Hironobu
Renesas Technology Corporation
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NAKANISHI Jingo
Renesas Technology Corporation
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Sato Hisakazu
The Authors Are With System Lsi Development Center Mitsubishi Electric Corporation
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Yamanaka T
Renesas Device Design
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Tomisawa Osamu
The Authors Are With System Lsi Development Center Mitsubishi Electric Corporation
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Itoh N
Semiconductor Company Toshiba Corporationthe Authors Are With Semiconductor Company Toshiba Corporat
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Shimada T
Renesas Technol. Itami‐shi Jpn
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Takata H
Renesas Technology
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Yamada A
Wireless Laboratories Ntt Docomo Inc.
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Suzuki Hiroaki
The Authors Are With System Lsi Development Center Mitsubishi Electric Corporation
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Takata Hidehiro
The Authors Are With Electric Devices Design Center Mitsubishi Electric Engineering Corporation
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