Degradation and Recovery of Metal-Oxide-Semiconductor (MOS) Devices Stressed with Fowler-Nordheim (FN) Gate Current
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-09-15
著者
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Inokawa H
Ntt Lsi Lab. Kanagawa Jpn
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INOKAWA Hiroshi
Microelectronics Laboratory, Santa Clara University
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AJIMINE Eric
Microelectronics Laboratory, Santa Clara University
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YANG Cary
Microelectronics Laboratory, Santa Clara University
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Inokawa Hiroshi
Microelectronics Laboratory Santa Clara University:(present Address)ntt Lsi Laboratories
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Yang C
Microelectronics Laboratory Santa Clara University
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Yang Cary
Microelectronics Lab. Santa Clara University
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Ajimine Eric
Microelectronics Laboratory Santa Clara University
関連論文
- Degradation and Recovery of Metal-Oxide-Semiconductor (MOS) Devices Stressed with Fowler-Nordheim (FN) Gate Current
- Direct Determination of Interface Trapped Charges
- Enhanced Degradation During Static Stressing of a Metal Oxide Semiconductor Field Effect Transistor Embedded in a Circuit
- Effects of Thermal Stability of Si_Ge_xC_y Layers on Properties of Their Contacts with Aluminum
- A New Two-Transistor MACRO Modeling of Source Side Injection (SSI) Flash Cell Considering Remote-Electrode Induced Barrier Lowering (RIBL)
- Enhanced Degradation During Static Stressing of a Metal Oxide Semiconductor Field Effect Transistor Embedded in a Circuit