A New Two-Transistor MACRO Modeling of Source Side Injection (SSI) Flash Cell Considering Remote-Electrode Induced Barrier Lowering (RIBL)
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概要
- 論文の詳細を見る
- 2001-09-25
著者
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YANG Cary
Microelectronics Laboratory, Santa Clara University
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Sim Sang-pil
Microelectronics Lab. Santa Clara University
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Lee Kwyro
Dept. Of Eecs And Micros Research Center Kaist
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Lee Kwyro
Dept. Of Eecs And Micros Research Center
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Lee Kwyro
Dept. Of Eecs Korea Advanced Institute Of Science And Technology (kaist)
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LIU Chun-Mai
Winbond Electronics Corporation of America
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Yang Cary
Microelectronics Lab. Santa Clara University
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Liu Chun-mai
Winbond Electronics Corp. America
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KORDESCH Al
Winbond Electronics Corp. America
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LEE Ben
Winbond Electronics Corp. America
関連論文
- Degradation and Recovery of Metal-Oxide-Semiconductor (MOS) Devices Stressed with Fowler-Nordheim (FN) Gate Current
- Direct Determination of Interface Trapped Charges
- Enhanced Degradation During Static Stressing of a Metal Oxide Semiconductor Field Effect Transistor Embedded in a Circuit
- On the Capacitance Coupling Ratios of a Source-Side Injection Flash Memory Cell
- On the Capacitance Coupling Ratios of a Source-Side Injection Flash Memory Cell^1
- On the Program and the Read of Multilevel Storage Using Source Side Injection Flash Memory
- On the Program and the Read of Multilevel Storage Using Source Side Injection Flash Memory
- Effects of Thermal Stability of Si_Ge_xC_y Layers on Properties of Their Contacts with Aluminum
- The Impact of nm CMOS Technology on Wireless Circuit and System (Devices:先端デバイスの基礎と応用に関するアジアワークショップ)
- A New Two-Transistor MACRO Modeling of Source Side Injection (SSI) Flash Cell Considering Remote-Electrode Induced Barrier Lowering (RIBL)
- The Impact of nm CMOS Technology on Wireless Circuit and System (Devices:先端デバイスの基礎と応用に関するアジアワークショップ)
- Macro Gate Current Model and Modeling Parameter Extraction of the SSI Flash Cell
- Turn-off Tansient Analysis of a Double Diffused Metal-Oxide-Semiconductor Device Considering Quasi Saturation
- On the Capacitance Coupling Ratios of a Source-Side Injection Flash Memory Cell
- Enhanced Degradation During Static Stressing of a Metal Oxide Semiconductor Field Effect Transistor Embedded in a Circuit