On the Capacitance Coupling Ratios of a Source-Side Injection Flash Memory Cell
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-01
著者
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Brennan James
Winbond Electronics Corporation Of America
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Liu C‐m
Dept. Of Electrical Eng. Rm. 338 National Taiwan University
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LIU Chun-Mai
Winbond Electronics Corporation of America
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CHAN Kaiman
Winbond Electronics Corporation of America
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GUO Ping
Winbond Electronics Corporation of America
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KORDESCH Albert
Winbond Electronics Corporation of America
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SU Kung-Yen
Winbond Electronics Corporation of America
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Chan Kevin
Winbond Electronics Corporation Of America
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Liu Chun-mai
Winbond Electronics Corp. America
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Guo P
Fox Chase Cancer Center Pa Usa
関連論文
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- A New Two-Transistor MACRO Modeling of Source Side Injection (SSI) Flash Cell Considering Remote-Electrode Induced Barrier Lowering (RIBL)
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- Current Status of 200mm and 300mm Silicon Wafers
- Macro Gate Current Model and Modeling Parameter Extraction of the SSI Flash Cell
- Turn-off Tansient Analysis of a Double Diffused Metal-Oxide-Semiconductor Device Considering Quasi Saturation
- On the Capacitance Coupling Ratios of a Source-Side Injection Flash Memory Cell