Liu Chun-mai | Winbond Electronics Corp. America
スポンサーリンク
概要
関連著者
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Liu Chun-mai
Winbond Electronics Corp. America
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LIU Chun-Mai
Winbond Electronics Corporation of America
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GUO Ping
Winbond Electronics Corporation of America
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KORDESCH Albert
Winbond Electronics Corporation of America
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SU Kung-Yen
Winbond Electronics Corporation of America
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Liu C‐m
Dept. Of Electrical Eng. Rm. 338 National Taiwan University
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CHAN Kaiman
Winbond Electronics Corporation of America
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Guo P
Fox Chase Cancer Center Pa Usa
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Brennan James
Winbond Electronics Corporation Of America
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Chan Kevin
Winbond Electronics Corporation Of America
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LEE Ben
Winbond Electronics Corp. America
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YANG Cary
Microelectronics Laboratory, Santa Clara University
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Sim Sang-pil
Microelectronics Lab. Santa Clara University
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Lee Kwyro
Dept. Of Eecs And Micros Research Center Kaist
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Lee Kwyro
Dept. Of Eecs And Micros Research Center
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Lee Kwyro
Dept. Of Eecs Korea Advanced Institute Of Science And Technology (kaist)
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Yang Cary
Microelectronics Lab. Santa Clara University
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KORDESCH Al
Winbond Electronics Corp. America
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CHANG Ming-Bing
Winbond Electronics Corporation of America
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Lee Ben
Winbond Electronics Corporation Of America
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Su Kung-Yen
Winbond Electronics Corporation of America, 2727 North First St., San Jose, CA 95134, USA
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Liu Chun-Mai
Winbond Electronics Corporation of America, 2727 North First St., San Jose, CA 95134, USA
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Brennan Jr.
Winbond Electronics Corporation of America, 2727 North First St., San Jose, CA 95134, USA
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Kordesch Albert
Winbond Electronics Corporation of America, 2727 North First St., San Jose, CA 95134, USA
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Brennan James
Winbond Electronics Corporation of America, 2727 North First St., San Jose, CA 95134, USA
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Guo Ping
Winbond Electronics Corporation of America, 2727 North First St., San Jose, CA 95134, USA
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Chan Kaiman
Winbond Electronics Corporation of America, 2727 North First St., San Jose, CA 95134, USA
著作論文
- On the Capacitance Coupling Ratios of a Source-Side Injection Flash Memory Cell
- On the Capacitance Coupling Ratios of a Source-Side Injection Flash Memory Cell^1
- A New Two-Transistor MACRO Modeling of Source Side Injection (SSI) Flash Cell Considering Remote-Electrode Induced Barrier Lowering (RIBL)
- Macro Gate Current Model and Modeling Parameter Extraction of the SSI Flash Cell
- On the Capacitance Coupling Ratios of a Source-Side Injection Flash Memory Cell