On the Capacitance Coupling Ratios of a Source-Side Injection Flash Memory Cell

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概要

• 論文の詳細を見る

• A new method for measuring the capacitance coupling ratios of non-volatile memory cells is reported. This method is applied to the source-side-injection (SSI) Flash cell. Conventional extraction methods are complicated by the presence of the select transistor. In this work the coupling ratios of a source-side injection Flash memory cell are extracted from source-follower voltage ($V_{\text{sf}}$) measurements of the Flash cell and a reference cell, in the read mode. Validity of these coupling ratios and a two-transistor memory cell representation under programming condition are confirmed via two-dimensional device simulations. These coupling ratios provide a solid base for a multilevel Flash cell circuit model.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-04-30

著者

• CHAN Kaiman

  Winbond Electronics Corporation of America

• GUO Ping

  Winbond Electronics Corporation of America

• KORDESCH Albert

  Winbond Electronics Corporation of America

• SU Kung-Yen

  Winbond Electronics Corporation of America

• Liu Chun-mai

  Winbond Electronics Corp. America

• Su Kung-Yen

  Winbond Electronics Corporation of America, 2727 North First St., San Jose, CA 95134, USA

• Liu Chun-Mai

  Winbond Electronics Corporation of America, 2727 North First St., San Jose, CA 95134, USA

• Brennan Jr.

  Winbond Electronics Corporation of America, 2727 North First St., San Jose, CA 95134, USA

• Kordesch Albert

  Winbond Electronics Corporation of America, 2727 North First St., San Jose, CA 95134, USA

• Brennan James

  Winbond Electronics Corporation of America, 2727 North First St., San Jose, CA 95134, USA

• Guo Ping

  Winbond Electronics Corporation of America, 2727 North First St., San Jose, CA 95134, USA

• Chan Kaiman

  Winbond Electronics Corporation of America, 2727 North First St., San Jose, CA 95134, USA

関連論文

• On the Capacitance Coupling Ratios of a Source-Side Injection Flash Memory Cell
• On the Capacitance Coupling Ratios of a Source-Side Injection Flash Memory Cell^1
• On the Program and the Read of Multilevel Storage Using Source Side Injection Flash Memory
• On the Program and the Read of Multilevel Storage Using Source Side Injection Flash Memory
• A New Two-Transistor MACRO Modeling of Source Side Injection (SSI) Flash Cell Considering Remote-Electrode Induced Barrier Lowering (RIBL)
• Macro Gate Current Model and Modeling Parameter Extraction of the SSI Flash Cell
• On the Capacitance Coupling Ratios of a Source-Side Injection Flash Memory Cell

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