Turn-off Tansient Analysis of a Double Diffused Metal-Oxide-Semiconductor Device Considering Quasi Saturation

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概要

• 論文の詳細を見る

• This paper reports the turn-off transient of a double diffused metal-oxide-semiconductor (DMOS) device considering the quasi-saturation behavior. Based on the two-dimensional (2D) simulation result, during the input ramp-down period of 100 ps, the accumulated electrons below the gate oxide are pushed toward the p region below the lateral channel toward the source, causing a surge in source current. After the input ramp-down period, these electrons are withdrawn from the drain by the quasi-saturation current.

• 社団法人応用物理学会の論文
• 1995-02-28

著者

• Liu C‐m

  Dept. Of Electrical Eng. Rm. 338 National Taiwan University

• LIU Chun-Mai

  Winbond Electronics Corporation of America

• Liu Chung-Min

  Dept. of Electrical Eng., Rm. 338, National Taiwan University

• Kuo James

  Dept. of Electrical Eng., Rm. 338, National Taiwan University

• Kuo James

  Dept. Of Electrical Eng. Rm. 338 National Taiwan University

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