On the Program and the Read of Multilevel Storage Using Source Side Injection Flash Memory
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-04-30
著者
-
Brennan James
Winbond Electronics Corporation Of America
-
Liu C‐m
Dept. Of Electrical Eng. Rm. 338 National Taiwan University
-
LIU Chun-Mai
Winbond Electronics Corporation of America
-
GUO Ping
Winbond Electronics Corporation of America
-
KORDESCH Albert
Winbond Electronics Corporation of America
-
SU Kung-Yen
Winbond Electronics Corporation of America
-
LIU Chun-Mai
Information Storage Devices, Inc.
-
BRENNAN James
Information Storage Devices, Inc.
-
GUO Ping
Information Storage Devices, Inc.
-
KORDESCH Albert
Information Storage Devices, Inc.
-
SU Kung-Yen
Information Storage Devices, Inc.
-
Guo P
Fox Chase Cancer Center Pa Usa
-
Su Kung-yen
Information Storage Devices Inc.
-
Kordesch Albert
Information Storage Devices Inc.
-
Brennan James
Information Storage Devices Inc.
-
Brennan Jr
Information Storage Devices, Inc.
関連論文
- On the Capacitance Coupling Ratios of a Source-Side Injection Flash Memory Cell
- On the Capacitance Coupling Ratios of a Source-Side Injection Flash Memory Cell^1
- On the Program and the Read of Multilevel Storage Using Source Side Injection Flash Memory
- On the Program and the Read of Multilevel Storage Using Source Side Injection Flash Memory
- A New Two-Transistor MACRO Modeling of Source Side Injection (SSI) Flash Cell Considering Remote-Electrode Induced Barrier Lowering (RIBL)
- Macro Gate Current Model and Modeling Parameter Extraction of the SSI Flash Cell
- Turn-off Tansient Analysis of a Double Diffused Metal-Oxide-Semiconductor Device Considering Quasi Saturation
- On the Capacitance Coupling Ratios of a Source-Side Injection Flash Memory Cell