NODA Satoshi | Renesas Technology Corp.
スポンサーリンク
概要
関連著者
-
Kurata Hideaki
Central Research Laboratory Hitachi Ltd.
-
KOBAYASHI Takashi
Central Research Laboratory, Hitachi Ltd.
-
OTSUGA Kazuo
Central Research Laboratory, Hitachi, Ltd.
-
NODA Satoshi
Renesas Technology Corp.
-
SASAGO Yoshitaka
Central Research Laboratory, Hitachi, Ltd.
-
ARIGANE Tsuyoshi
Central Research Laboratory, Hitachi, Ltd.
-
KAWAMURA Tetsufumi
Central Research Laboratory, Hitachi, Ltd.
-
Otsuga Kazuo
Central Research Laboratory Hitachi Ltd.
-
Kawamura Tetsufumi
Central Research Laboratory Hitachi Ltd.
-
Kobayashi Takashi
Central Research Laboratory Hitachi Ltd.
-
Otsuga Kazuo
Hitachi Ltd. Kokubunji‐shi Jpn
-
Noda Satoshi
Renesas Technology Corporation
-
Kurata Hideaki
Hitachi Ltd. Kokubunji‐shi Jpn
-
Sasago Yoshitaka
Central Research Laboratory Hitachi Ltd.
-
Arigane Tsuyoshi
Central Research Laboratory Hitachi Ltd.
-
Sakamoto Yoshinori
Renesas Technology Corp.
-
Ito Teruhiko
Renesas Technology Corp.
-
KUME Hitoshi
Central Research Laboratory, Hitachi Ltd.
-
HOMMA Kazuki
Renesas Technology Corp.
-
SHIMIZU Masahiro
Renesas Technology Corp.
-
IKEDA Yoshinori
Renesas Technology Corp.
-
TSUCHIYA Osamu
Renesas Technology Corp.
-
FURUSAWA Kazunori
Hitachi ULSI Systems Co., Ltd.
-
Kume Hitoshi
Central Research Laboratory Hitachi Ltd.
-
Kume Hitoshi
Central Research Laboratory
-
Furusawa Kazunori
Hitachi Ulsi Systems Co. Ltd.
著作論文
- A 126mm^2 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology(Integrated Electronics)
- Selective-Capacitance Constant-Charge-Injection Programming Scheme for High-Speed Multilevel AG-AND Flash Memories(Memory,Low-Power, High-Speed LSIs and Related Technologies)