Selective-Capacitance Constant-Charge-Injection Programming Scheme for High-Speed Multilevel AG-AND Flash Memories(Memory,<Special Section>Low-Power, High-Speed LSIs and Related Technologies)

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We developed a selective-capacitance constant-charge-injection programming (CCIP) scheme to achieve high programming throughput in multilevel assist-gate (AG)-AND flash memories. In the conventional CCIP scheme, only one type of capacitance for storing programming charge was used for all levels of multilevel cells. The proposed scheme utilized multiple types of capacitance to minimize the programming time of all levels by using optimized capacitance values for each V_<th> level. In 4-Gbit AG-AND flash memories, a local bit line capacitance is utilized for mid-level programming, and the sum of local and global bit line capacitance is utilized for top-level programming. In addition, we developed a verify-less programming scheme which reduces top-level programming time because it is not necessary to verify the top-level of multilevel cells in AND flash memory architecture. A programming throughput of 10MB/s is achieved using the proposed schemes. This is 1.6 times faster than the throughput with conventional CCIP.
社団法人電子情報通信学会の論文
2007-04-01