A Design of Constant-Charge-Injection Programming Scheme for AG-AND Flash Memories Using Array-Level Analytical Model

スポンサーリンク

概要

• 論文の詳細を見る
• 2008-04-01

著者

• KAJIYAMA Shinya

  Central Research Laboratory, Hitachi, Ltd.

• Kurata Hideaki

  Central Research Laboratory Hitachi Ltd.

• OTSUGA Kazuo

  Central Research Laboratory, Hitachi, Ltd.

• ISHIKAWA Kiyoshi

  Renesas Technology Corporation

• Kajiyama Shinya

  Central Research Laboratory Hitachi Ltd.

• Otsuga Kazuo

  Central Research Laboratory Hitachi Ltd.

• Kajiyama Shinya

  Hitachi Ltd. Kokubunji‐shi Jpn

• Ishikawa Kiyoshi

  Renesas Technol. Corp. Itami‐shi Jpn

• Sonoda Ken'ichiro

  Central Research Laboratory Hitachi Ltd.

• KURATA Hideaki

  Central Research Laboratory, Hitachi, Ltd.

関連論文

• A 300MHz Embedded Flash Memory with Pipeline Architecture and Offset-Free Sense Amplifiers for Dual-Core Automotive Microcontrollers
• A 300MHz Embedded Flash Memory with Pipeline Architecture and Offset-Free Sense Amplifiers for Dual-Core Automotive Microcontrollers
• A Design of Constant-Charge-Injection Programming Scheme for AG-AND Flash Memories Using Array-Level Analytical Model
• A 126mm^2 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology(Integrated Electronics)
• A Method of Precise Estimation of Physical Parameters in LSI Interconnect Structures(Interconnect, VLSI Design and CAD Algorithms)
• Trends in High-Density Flash Memory Technologies(Flash Memory)(New Era of Nonvolatile Memories)
• A 130-nm CMOS 95-mm^2 1-Gb Multilevel AG-AND-Type Flash Memory with 10-MB/s Programming Throughput(Integrated Electronics)
• Selective-Capacitance Constant-Charge-Injection Programming Scheme for High-Speed Multilevel AG-AND Flash Memories(Memory,Low-Power, High-Speed LSIs and Related Technologies)

スポンサーリンク