Trends in High-Density Flash Memory Technologies(Flash Memory)(<Special Section>New Era of Nonvolatile Memories)
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概要
- 論文の詳細を見る
This paper reviews process, device and circuit technologies of high-density flash memories, whose market has grown explosively as bridge media. In this memory, programming throughput as well as low bit costs is critical issue. To meet the requirements, we have developed multi-level AG (Assist Gate)-AND type flash memory with small effective cell size and 10 MB/s programming throughput. We clarify three challenges to the multilevel flash memory in terms of operation method, high reliability for data retention, and high-speed multilevel programming. Future trends of high-density flash memories are also discussed.
- 社団法人電子情報通信学会の論文
- 2004-10-01
著者
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Kurata Hideaki
Central Research Laboratory Hitachi Ltd.
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KOBAYASHI Takashi
Central Research Laboratory, Hitachi Ltd.
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Kobayashi Tadayuki
University Of Electro-communications
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Kobayashi Takashi
Central Research Laboratory Hitachi Ltd.
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KIMURA Katsutaka
Hitachi Research Laboratory, Hitachi Ltd.
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Kimura Katsutaka
Hitachi Research Laboratory Hitachi Ltd.
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Kurata H
Central Research Laboratory Hitachi Ltd.
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