A 130-nm CMOS 95-mm^2 1-Gb Multilevel AG-AND-Type Flash Memory with 10-MB/s Programming Throughput(Integrated Electronics)
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概要
- 論文の詳細を見る
A 1-Gb AG-AND flash memory has been fabricated using 0.13-μm CMOS technology, resulting in a cell area of 0.104μm^2 and a chip area of 95.2mm^2. By applying constant-charge-injection programming and source-line-select programming, a fast page programming time of 600μs is achieved. The four-bank operation attains a fast programming throughput of 10MB/s in multilevel flash memories. The compact SRAM write buffers reduce the chip area penalty. A rewrite throughput of 8.3MB/s is achieved by means of the RAM-write operation during the erase mode.
- 社団法人電子情報通信学会の論文
- 2006-10-01
著者
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Kurata Hideaki
Central Research Laboratory Hitachi Ltd.
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KOBAYASHI Takashi
Central Research Laboratory, Hitachi Ltd.
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SASAGO Yoshitaka
Central Research Laboratory, Hitachi, Ltd.
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ARIGANE Tsuyoshi
Central Research Laboratory, Hitachi, Ltd.
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IKEDA Yoshinori
Renesas Technology Corp.
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TSUCHIYA Osamu
Renesas Technology Corp.
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FURUSAWA Kazunori
Hitachi ULSI Systems Co., Ltd.
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Kobayashi Takashi
Central Research Laboratory Hitachi Ltd.
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Kurata Hideaki
Hitachi Ltd. Kokubunji‐shi Jpn
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Sasago Yoshitaka
Central Research Laboratory Hitachi Ltd.
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SAEKI Shunichi
Renesas Northern Japan Semiconductor, Inc.
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YOSHIDA Keiichi
Renesas Technology Corp.
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TAKASE Yoshinori
Renesas Technology Corp.
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YOSHITAKE Takayuki
Renesas Technology Corp.
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NARUMI Shunichi
Renesas Technology Corp.
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KANAMITSU Michitaro
Hitachi ULSI Systems Co., Ltd.
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IZAWA Kazuto
Renesas Technology Corp.
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Saeki Shunichi
Renesas Northern Japan Semiconductor Inc.
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Arigane Tsuyoshi
Central Research Laboratory Hitachi Ltd.
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Furusawa Kazunori
Hitachi Ulsi Systems Co. Ltd.
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Kanamitsu Michitaro
Hitachi Ulsi Systems Co. Ltd.
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