OHKURA Makoto | Central Research Lab., Hitachi, Lid.

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概要

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著作論文

Simultaneous Measurement of Size and Depth of Each Defect in a Silicon Wafer Using Light Scattering at Two Wavelengths : Principle, Limitation and Applications of Optical Shallow Defect Analyzer
Micro-Probe Reflection High-Energy Electron Diffraction Technique. : III. Observation of Polycrystalline Silicon Film on Crystalline Silicon Substrate Irradiated by Continuous-Wave Ar^+-Laser
Characterization of Laser-Induced Epitaxial Si Crystal by Evaluating MOSFET's Fabricated in Grown Layers : A-6: SILICON CRYSTALS
A New Simple Method for Extracting the Capacitance Coupling Coefficients of Sub-0.5-μm Flash Memory Cells (Special Issue on Microelectronic Test Structures)
The Oxide Reliability Improvement with Ultra-Dry Unloading in Wet Oxidation Using Load Lock Oxidation System
Highly Efficient Gettering of Heavy Metals Using Carbon Implanted Eptaxial Si Wafers
Single Pulse Laser Annealing of a Double-Implanted Layer
Degradation of n^+/p Junction Characteristics by Aluminum Contamination
The Increase of the Native Oxide Thickness on H-Terminated Si Surfaces by Gaseous Contamination in a Clean Room Atmosphere
Controlling the Solid-Phase Nucleation of Amorphous Si by Means of a Substrate Step Structure and Local Phosphorus Doping
Degradation of n+/p Junction Characteristics by Aluminum Contamination

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