Itoga T | Central Research Laboratory Hitachi Ltd.
スポンサーリンク
概要
関連著者
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Itoga T
Central Research Laboratory Hitachi Ltd.
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ITOGA Toshihiko
Central Research Laboratories, Hitachi Ltd.
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Itoga Toshihiko
Central Research Laboratories Hitachi Ltd.
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Kojima H
Nagoya Univ. Nagoya Jpn
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KOJIMA Hisao
Central Research Laboratory, Hitachi Ltd.
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Motai Kumi
Institute For Materials Research (imr) Tohoku University
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Motai Kumi
Central Research Laboratory Hitachi Ltd.
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OHKURA Makoto
Central Research Lab., Hitachi, Lid.
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Kanehori Keiichi
Central Research Laboratory Hitachi Ltd
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Irie T
Kyoto Univ. Kyoto Jpn
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Ohkura M
Hitachi Ltd.
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IRIE Takashi
Central Research Laboratory, Hitachi Ltd.
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Kanehori K
Hitachi Ltd. Tokyo Jpn
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MATSUBARA Atsuko
Central Research Laboratory, Hitachi Ltd.
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Matsubara Akifumi
Central Research Laboratory Hitachi Ltd.
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Isshiki Minoru
Department Of Materials Science Faculty Of Engineering Tohoku University
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Isshiki Minoru
Research Institute Of Mineral Dressing And Metallurgy Tohoku University
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Hiraiwa Atsushi
Central Research Laboratory Hitachi Ltd.
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Uchida Wakio
Physics Department College Of General Education Tohoku University
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Yugami Jiro
Central Research Laboratory Hitachi Ltd.
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Yugami Jiro
Central Research Laboratory
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MOCHIZUKI Katsumi
Department of Materials Science, Faculty of Engineering, Tohoku University
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Masumoto K
Res. Inst. Electric And Magnetic Materials Sendai Jpn
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Masumoto Katashi
Department Of Ekectronic Materials Faculty Of Science And Engineering Ishinomaki Sensyu University:t
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ITOGA Toshihiko
Department of Materials Science, Faculty of Engineering, Tohoku University
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Mochizuki Katsumi
Department Of Electronic Materials Faculty Of Engineering Ishinomaki Senshu University
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Mochizuki Katsumi
Department Of Materials Science Faculty Of Engineering Tohoku University:(present Address)department
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Yugami Jiro
Central Research Laboratory, Hitachi Ltd.
著作論文
- The Effect of Isopropyl Alcohol Adsorption on the Electrical Characteristics of Thin Oxide
- The Effect of IPA Adsorption on Thin Oxide
- Degradation of n^+/p Junction Characteristics by Aluminum Contamination
- The Increase of the Native Oxide Thickness on H-Terminated Si Surfaces by Gaseous Contamination in a Clean Room Atmosphere
- Photoluminescence and Acceptor State of Na in ZnSe
- A Ceramic Plasma Torch for Determining Silicon Content in HF Solutions by Inductively Coupled Plasma Atomic Emission Spectrometry
- Ultra-Shallow Depth Profiling of Arsenic Implants in Silicon by Hydride Generation-Inductively Coupled Plasma Atomic Emission Spectrometry