Degradation of n^+/p Junction Characteristics by Aluminum Contamination

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 1997-07-01

著者

• Hiraiwa Atsushi

  Central Research Laboratory Hitachi Ltd.

• OHKURA Makoto

  Central Research Lab., Hitachi, Lid.

• Kojima H

  Nagoya Univ. Nagoya Jpn

• Ohkura M

  Hitachi Ltd.

• ITOGA Toshihiko

  Central Research Laboratories, Hitachi Ltd.

• KOJIMA Hisao

  Central Research Laboratory, Hitachi Ltd.

• Itoga T

  Central Research Laboratory Hitachi Ltd.

• Itoga Toshihiko

  Central Research Laboratories Hitachi Ltd.

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• Degradation of n^+/p Junction Characteristics by Aluminum Contamination
• The Increase of the Native Oxide Thickness on H-Terminated Si Surfaces by Gaseous Contamination in a Clean Room Atmosphere
• Fast Etching Phenomenon of Plasma-Silicon Nitride Films over Substrate Steps
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• Advantages of Fluorine Introduction in Boron Implanted Shallow p^+/n-Junction Formation
• Improvement of SiO2/Si Interface Properties Utilising Fluorine Ion Implantation and Drive-in Diffusion
• Degradation of n+/p Junction Characteristics by Aluminum Contamination

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