Advantages of Fluorine Introduction in Boron Implanted Shallow p^+/n-Junction Formation

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概要

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• The advantages of fluorine introduction on fabrication of shallow p^+/n-junctions have been demonstrated. This was done by implanting fluorine onto the boron implanted p^+/n-junction area prior to annealing. By introducing optimized amounts of fluorine, (1) the boron redistribution after annealing is suppressed, (2) the concentration of activated boron becomes higher, and (3) the leakage current level of the p^+/n-junction decreases. These behaviors may be due to interactions between fluorine and defects in the silicon substrate or at the SiO_2/Si interface.

• 社団法人応用物理学会の論文
• 1990-03-20

著者

• Itoga Toshihiko

  Central Research Laboratories Hitachi Ltd.

• Natsuaki Nobuyoshi

  Device Development Center Hitachi Lid.

• Itoga Toshihiko

  Central Research Laboratory, Hitachi Ltd.

• OHYU Kiyonori

  Central Research Laboratory, Hitachi Ltd.

• NATSUAKI Nobuyoshi

  Device Development Center, Hitachi Ltd.

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• Advantages of Fluorine Introduction in Boron Implanted Shallow p^+/n-Junction Formation
• Improvement of SiO2/Si Interface Properties Utilising Fluorine Ion Implantation and Drive-in Diffusion
• Degradation of n+/p Junction Characteristics by Aluminum Contamination

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