Fast Etching Phenomenon of Plasma-Silicon Nitride Films over Substrate Steps

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1979-01-05

著者

• Hiraiwa Atsushi

  Central Research Laboratory Hitachi Ltd.

• Harada Seiki

  Central Research Laboratory Hitachi Ltd.

• MUKAI Kiichiro

  Central Research Laboratory, Hitachi Ltd.

• YOSHIMI Takeo

  Musashi Works, Hitachi Ltd.

• ITOH Satoru

  Musashi Works, Hitachi Ltd.

• Yoshimi Takeo

  Musashi Works Hitachi Ltd.

• Mukai Kiichiro

  Central Research Laboratory Hitachi Ltd.

• Itoh Satoru

  Musashi Works Hitachi Ltd.

関連論文

• P-Type Polysilicon Processing Temperature Reduction Using In Situ Boron-Doped Amorphous Silicon
• Degradation of n^+/p Junction Characteristics by Aluminum Contamination
• Fast Etching Phenomenon of Plasma-Silicon Nitride Films over Substrate Steps
• Degradation of n+/p Junction Characteristics by Aluminum Contamination

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