The Effect of IPA Adsorption on Thin Oxide

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概要

• 論文の詳細を見る
• 1997-09-16

著者

• Motai Kumi

  Institute For Materials Research (imr) Tohoku University

• Motai Kumi

  Central Research Laboratory Hitachi Ltd.

• Irie T

  Kyoto Univ. Kyoto Jpn

• ITOGA Toshihiko

  Central Research Laboratories, Hitachi Ltd.

• IRIE Takashi

  Central Research Laboratory, Hitachi Ltd.

• Itoga T

  Central Research Laboratory Hitachi Ltd.

• Itoga Toshihiko

  Central Research Laboratories Hitachi Ltd.

関連論文

• Orientational Ordering of C_ Adsorbed on the Cu(111)1x1 Surface Studied by the FI-STM
• Scanning Tunneling Microscope Study of the Structural Transformation of the Si(111)7×7 Surface to the Na-Induced 3×1 Surface
• C_ Grown on the Cu(111)1×1 Surface
• Development of Ammonia Adsorption Filter and Its Application to LSI Manufacturing Environment
• The Effect of Isopropyl Alcohol Adsorption on the Electrical Characteristics of Thin Oxide
• The Effect of IPA Adsorption on Thin Oxide
• Quantitative Analysis of Trace Water in Monosilane Gas Using Atmospheric-Pressure Ionization Mass Spectrometer with Bicompartment Ion Source
• Quantitative Analysis of Trace Water in Highly Puified Nitrogen Gas by Atmospheric Pressure Ionization Mass Spectrometer
• A New Atmospheric Pressure Ionization Mass Spectrometer for the Analysis of Trace Gas Impurities in Silicon Source Gases used for Semiconductor Fabrication
• Quantitative Analysis of Trace Hydrogen in Highly Purified Nitrogen Gas Using Rapid Reactions in Atmospheric Pressure Ionization Mass Spectrometer
• A Drift Tube for Monitoring ppb Trace Water
• X-Ray Photoelectron Spectroscopy Study of Native Oxidation on Misoriented Si(100)
• Highly Efficient Gettering of Heavy Metals Using Carbon Implanted Eptaxial Si Wafers
• Adsorption Structure of the Na-Saturated Si(100)2×1 Surface Studied by Field-Ion Scanning Tunneling Microscopy/Spectroscopy
• Field Ion-Scanning Tunneling Microscopy Study of Sulfur/Chlorine Adsorption on the Cu(111) 1 × 1 Surface
• Degradation of n^+/p Junction Characteristics by Aluminum Contamination
• The Increase of the Native Oxide Thickness on H-Terminated Si Surfaces by Gaseous Contamination in a Clean Room Atmosphere
• Photoluminescence and Acceptor State of Na in ZnSe
• Field Ion-Scanning Tunneling Microscopy Study of the Ag (110)-O System
• A Ceramic Plasma Torch for Determining Silicon Content in HF Solutions by Inductively Coupled Plasma Atomic Emission Spectrometry
• Ultra-Shallow Depth Profiling of Arsenic Implants in Silicon by Hydride Generation-Inductively Coupled Plasma Atomic Emission Spectrometry
• Advantages of Fluorine Introduction in Boron Implanted Shallow p^+/n-Junction Formation
• Improvement of SiO2/Si Interface Properties Utilising Fluorine Ion Implantation and Drive-in Diffusion
• Degradation of n+/p Junction Characteristics by Aluminum Contamination

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