Ishida Takeshi | Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan

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概要

• Ishida Takeshiの詳細を見る
• 同名の論文著者
• Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japanの論文著者

関連著者

• Torii Kazuyoshi

  Central Research Laboratory Hitachi Lid.

• Mine Toshiyuki

  Central Research Laboratory Hitachi Ltd

• Ishida Takeshi

  Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan

• Kume Hitoshi

  Central Research Laboratory

• Shiraishi Kenji

  Graduate School Of Applied Physics Univ Of Tsukuba

• Miki Hiroshi

  Central Research Laboratory Hitachi Limited

• Mori Yuki

  Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan

• Tega Naoki

  Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan

• Yamada Ren-ichi

  Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan

• Shimamoto Yasuhiro

  Central Research Laboratory Hitachi Ltd.

• Shimamoto Yasuhiro

  Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan

• Fujisaki Koji

  Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan

• Yamada Renichi

  Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan

• Torii Kazuyoshi

  Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan

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著作論文

• Electron Trap Characteristics of Silicon Rich Silicon Nitride Thin Films
• State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO
• State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO₂ Films in a Metal-Oxide-Silicon Structure

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