Copper Diffusion Behavior in SiO_2/Si Structure During 400℃ Annealing

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-01-15

著者

• Yugami Jiro

  Central Research Laboratory Hitachi Ltd.

• Yugami Jiro

  Central Research Laboratory

• HOZAWA Kazuyuki

  Central Research Laboratory

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• Copper Diffusion Behavior in SiO_2/Si Structure During 400℃ Annealing
• The Increase of the Native Oxide Thickness on H-Terminated Si Surfaces by Gaseous Contamination in a Clean Room Atmosphere
• Copper Distribution near a SiO_2/Si Interface under Low-Temperature Annealing
• Copper Diffusion Behavior in SiO2/Si Structure During 400°C Annealing

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