Cross-Sectional X-Ray Topographic Study of Lattice Distortion in Silicon Crystals with Oxide Film
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概要
- 論文の詳細を見る
Cross-sectional X-ray topography, in which a specimen is prepared as a thin section perpendicular to the specimen surface, is proposed to qualitatively evaluate depth profiles of lattice distortion. The topographs obtained in a silcon wafer with an oxide film show a black speck near the film edge. Such a diffraction image is observed to be apparently deflected as a consequence of strain relaxation caused by the surface effect on the cross sections.
- 社団法人応用物理学会の論文
- 1990-06-20
著者
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ISOMAE Seiichi
Central Research Lab., Hitachi, Lid.
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Isomae Seiichi
Central Research Laboratory Hitachi Ltd.
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Nishino Yoichi
Central Research Laboratory Hitachi Lid.
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Nishino Yoichi
Central Research Laboratory Hitachi Ltd.:(present Address)department Of Materials Science And Engine
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HORIUCHI Masatada
Central Research Laboratory, Hitachi Ltd.
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Horiuchi M
Chubu Univ. Aichi Jpn
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Horiuchi Masatada
Central Research Laboratory Hitachi Ltd.
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