Phase State Analysis of Nickel Silicides in Complementary Metal–Oxide–Semiconductor Device Using Plasmon Energy Map

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概要

• 論文の詳細を見る

• Phase states of nickel silicides in a complementary metal–oxide–semiconductor (CMOS) device were investigated using energy-filtering transmission electron microscopy (EF-TEM). Differences in plasmon energy at each location of the device were identified in two dimensions using a plasmon energy map to analyze the phase states of nickel silicides. We determined that the near side of polycrystalline silicon (poly-Si) corresponds to the NiSi phase in the gate electrode and that the contact corresponds to the NiSi2 phase, although determining the different phase states of nickel silicides using the contrast of a TEM image was difficult.

• 2009-01-25

著者

• Hashikawa Naoto

  Renesas Electronics Corp. Tokyo Jpn

• Asayama Kyoichiro

  Renesas Electronics Corp. Tokyo Jpn

• Terada Shohei

  Materials Research Laboratory, Hitachi, Ltd., 7-1-1 Omika-cho, Hitachi, Ibaraki 319-1292, Japan

• Hirano Tatsumi

  Materials Research Laboratory, Hitachi, Ltd., 7-1-1 Omika-cho, Hitachi, Ibaraki 319-1292, Japan

関連論文

• A Dopant Cluster in a Highly Antimony Doped Silicon Crystal
• Boron Observation in p-Type Silicon Device by Spherical Aberration Corrected Scanning Transmission Electron Microscope
• Phase State Analysis of Nickel Silicides in Complementary Metal–Oxide–Semiconductor Device Using Plasmon Energy Map
• Polymorphs Discrimination of Nickel Silicides in Device Structure by Improved Analyses of Low Loss Electron Energy Loss Spectrum

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