Formation of Palladium Silicide Films on Silicon(111)$7\times 7$ Surface at ${\sim}150$ K
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概要
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The formation of palladium silicide on Si(111) at ${\sim}150$ K was investigated in situ by Auger electron spectroscopy, reflection high-energy electron diffraction analysis, scanning tunneling microscopy, and ex situ transmission electron microscopy. It is demonstrated that silicide was formed spontaneously by Pd deposition even at ${\sim}150$ K. The phase of the silicide was Pd2Si, and films of Pd2Si were grown epitaxially. The surface of the films was uneven. There were bumps of 1–5 nm in height and approximately 20 nm in diameter on the surface. The primarily formed silicide phase is discussed using an effective heat of formation model.
- 2005-03-15
著者
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Mori Hirotaro
Research Center For Ultra-high Voltage Electron Microscopy Osaka University
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Hirono Shinsuke
Research Center For Ultra-high Voltage Electron Microscopy Osaka University
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Mori Hirotaro
Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Mihogaoka 7-1, Ibaraki, Osaka 567-0047, Japan
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Hirono Shinsuke
Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Mihogaoka 7-1, Ibaraki, Osaka 567-0047, Japan
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Okada Hideaki
Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Mihogaoka 7-1, Ibaraki, Osaka 567-0047, Japan
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Okado Hideaki
Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Mihogaoka 7-1, Ibaraki, Osaka 567-0047, Japan
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