Restructuring of the Reconstructed Si(111)7×7 Surface by Metal(Au, Ag) Deposition
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概要
- 論文の詳細を見る
Restructuring epitaxy of Au and Ag on the Si(111)7×7 reconstructed surface has been studied by scanning tunneling microscopy (STM), which proceeds with hole-island pair creation of the √<3>×√<3> structure on the 7×7 surface. The hole-island pair, which is a pair of areas with the √<3>×√<3> structure lying higher and lower than the 7×7 surface, is found to be due to the change in the number density of the Si atoms in the reconstructed Si surface layer. The ratio of the area of the hole to that of the island is almost same from one pair to the other. The Si atoms of the reconstructed surface layer of the island are supposed to be supplied from the surface layer forming the hole. Provided that the number density of the Si atoms in the 7×7 surface is 2.08 ML according to the dimer adatom stacking-fault (DAS) model, the result indicates that the number density of Si atoms in both √<3>×√<3> structure is 1 ML and that almost all the Si atoms which included in the initial 7×7 surface are preserved to create the hole-island pair. Such restructuring epitaxy results in roughness of the surface even if the initial surface is atomically flat.
- 社団法人応用物理学会の論文
- 1993-03-30
著者
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Takayanagi Kunio
Department Of Condense Matter Physics Tokyo Institute Of Technology
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Takayanagi Kunio
Department Of Materials Science And Engeneering Interdisciplinary Graduate School Of Science And Eng
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Shibata A
Fukui National Coll. Technol. Fukui Jpn
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SHIBATA Akihide
Department of Materials Science and Engeneering, Interdisciplinary Graduate School of Science and En
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