Synthesis of Iron Silicides by Electron-Beam Evaporation: Effects of Substrate Prebaking Temperature and Fe Deposition Thickness

概要

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The microstructures of iron silicides synthesized by electron-beam evaporation were examined as a function of iron (Fe) deposition thickness on a silicon (Si) substrate. Si(100) substrates were prebaked at 923 K to clean their surface, and then an Fe thin film layer with a thickness of 2–10 nm was deposited. Transmission electron microscopy observations revealed that the atomistic structures of the as-deposited thin film layer depend on the Fe deposition thickness: amorphous layer (2 nm) and crystalline Fe layer (4–10 nm). After thermal annealing at 1173 K for 2 h, the deposited Fe atoms diffused into the Si substrate and formed iron silicides. It was found that both $\varepsilon$-FeSi and $\beta$-FeSi2 exist at the deposition thickness of 2 nm, and that the amount of $\beta$-phase increases with the deposition thickness. Well-isolated iron silicide nanoparticles were obtained at deposition thicknesses less than 4 nm, whereas the deposition thickness of ${>}10$ nm was necessary for the formation of a continuous $\beta$-FeSi2 layer on the Si substrate. We also examined the effects of prebaking temperature on the as-deposited thin film layer and annealing-induced iron silicide phases.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2007-02-15