Design of Spin Polarization Analyzer using Transverse-Longitudinal Correlation in Resistivities Induced by Spin--Orbit Interaction

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概要

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• We have theoretically studied a methodology for the measurement of the degree of spin polarization (P) in metals as well as semiconductors. Our principle is based on the correlation existing between transverse resistivity (\rho_{yx}) and longitudinal resistivity (\rho_{xx}), both influenced by transverse scattering due to a spin--orbit interaction (SOI) as well as longitudinal scattering due to usual mechanisms. Our spin polarization analyzer employs an unknown polarization conductor as a source electrode from which spin-polarized electrons are injected into a nonmagnetic (NM) channel region. The channel length is set to be much smaller than its spin diffusion length so that \rho_{yx} and \rho_{xx} in the NM region, both complementarily influenced by carrier spin polarization, would be measured to obtain the P value. Also, application to OR and XOR logic gates are discussed on the basis of our spin polarization analyzer.

• 2013-01-25

著者

• Hasegawa Shigehiko

  The Institute Of Scientific And Industrial Research Osaka University

• Sakai Masamichi

  Division of Material Science, Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan

• Kitajima Akira

  The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan

• Awano Hiroyuki

  Information Storage Materials Laboratory, Toyota Technological Institute, Nagoya 468-8511, Japan

• Oshima Akihiro

  The Institute of Scientific and Industrial Research (ISIR), Osaka University, Ibaraki, Osaka 567-0047, Japan

• Awano Hiroyuki

  Information Storage Materials Laboratory, Toyota Technological Institute, Nagoya 488-8511, Japan

• Kakizaki Koichi

  Division of Material Science, Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan

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