Current Injection Laser Operation of GaAs/InAs Short-Period Superlattice/InP(411) Quantum Dot Laser Diodes with InAlAs Current Blocking Layer
スポンサーリンク
概要
- 論文の詳細を見る
High lateral density (${\sim}10^{11}$ cm-2) and well-aligned quantum dot (QD) structures are self-formed in (GaAs)2(InAs)n short period superlattices grown on InP(411) substrates by gas source molecular beam epitaxy. Light emitting diodes with these QDs as an active layer were fabricated. However, the light output power showed saturation for the driving current of over 100 mA. To overcome this problem, an InAlAs layer was inserted between QD active layer and p-type cladding layer as a current blocking layer. As a result, no saturation of output power was obtained up to 200 mA. Furthermore, pulsed current injection laser operation was realized for these layer structures.
- Japan Society of Applied Physicsの論文
- 2005-05-10
著者
-
Asahi Hajime
The Institute Of Scientific And Industrial Research Osaha University
-
SHIMADA Takashi
The Institute of Scientific and Industrial Research, Osaka University
-
Hasegawa Shigehiko
The Institute Of Scientific And Industrial Research Osaka University
-
Shimada Takashi
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
関連論文
- CuAu-Type Ordering Self-formed by Growing GaP/InP Short-Period Superlattices on GaAs (011) Substrate
- Straight Quantum Wires Self-Formed by Growing GaP/InP Short-Period Superlattices on GaAs(011) Substrate
- Improved Optical Properties of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices
- Scanning Tunneling Microscopy Study on Self-Formation Process of Quantum Dot Structures by the Growth of GaP/InP Short-Period Superlattices on GaAs(311)A Substrate
- Vertical Quantum Confinement Effect on Optical Properties of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices
- Scanning Tunneling Microscopy/Spectroscopy Study of Self-Organized Quantum Dot Structures Formed in GaP/InP Short-Period Superlattices ( Scanning Tunneling Microscopy)
- Gas Source Molecular Beam Epitaxy Growth of GaN-Rich Side of GaNP Alloys and Their Observation by Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
- Self-Organized Dot/Columnar Structures and Quasi-Perfect CuPt-Type Ordering in (GaP)_n(InP)_n Superlattices Grown on GaAs (N11) Substrates by Gas Source Molecular Beam Epitaxy
- Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy Observation of III-V Compound Semicomductor Nanostructures
- Substrate Orientation Dependence of Optical Properties of GaP/AlP Short-Period Superlattices
- Photoluminescence Wavelength Dependence on Layer Structure of GaP/AlP Modulated Superlattices
- Improvement of Optical Properties of Multilayer Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices on GaAs(311)A
- Time-Resolved Photoluminescence Study of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattice
- Growth Temperature Dependence of Self-Formation Process of Quantum Dot Structures in GaP/InP Short-Period Superlattices Grown on GaAs (311)A Substrate
- Possibility for the Discrimination of Submonolayer InAs and GaAs Grown on Tilted GaAs Substrate
- Formation of a High-Electrical-Resistance Region in InP by Ga Ion Implantation
- Diffuse Scattering in the High-Temperature(1×1)State of Si(111)
- TlGaP Layers Grown on GaAs Substrates by Gas Source Molecular Beam Epitaxy
- Improved Growth Kinetic Model for Metalorganic Molecular Beam Epitaxy Using Triethylgallium
- Selective Area Epitaxy of GaSb by Metal-Organic Molecular Beam Epitaxy
- Formation of InAs Wires and Dots on Vicinal GaAs (110) Surfaces with Giant Steps by Molecular Beam Epitaxy
- Low-Energy Electron Diffraction Analysis on Initial Stages of Ge Growth on Si(111)(1×1) -As and As-Desorbed Si(111)(1×1) Surfaces
- Initial Stages of GaAs Molecular Beam Epitaxy Growth on Porous Si
- Initial Stages of GaAs MBE Growth on Si(111)(√3×√3)-Ga Surfaces
- Growth of InMnAsSb:InSb Heterostructures with Mid-Infrared-Light-Induced Ferromagnetic Properties
- Effects of Adsorption and Thermal Desorption of Atomic Hydrogen on Electronic and Atomic Structures of Si(111)(√ x √)-Al Surface
- Si (111)(√×√)-Al Surface Studied by Angle-Resolved Electron-Energy-Loss Spectroscopy
- Charge-Balanced Heteroepitaxial Growth of GaAs on Si
- Current Injection Laser Operation of GaAs/InAs Short-Period Superlattice/InP(411) Quantum Dot Laser Diodes with InAlAs Current Blocking Layer
- 1.3-1.5-μm-Wavelength GaAs/InAs Superlattice Quantum-Dot Light-Emitting Diodes Grown on InP (411)A Substrates
- 1.3-1.6-μm-Wavelength Quantum Dots Self-Formed in GaAs/InAs Short-Period Superlattices Grown on InP (411)A Substrates : Semiconductors
- Field Emission from Polycrystalline GaN Grown on Mo Substrate : Semiconductors
- High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2×2) and (4×4) Reflection High Energy Electron Diffraction Patterns
- Growth Temperature Dependence of InAs ISlands Grown on GaAs (001) Substrates
- Temperature-Stable Wavelength TlInGaAs/InP Double Heterostructure Light-Emitting Diodes Grown by Gas Source Molecular Beam Epitaxy
- Gas Source Molecular Beam Epitaxy Growth of TlInGaAs Layers on GaAs Substrates
- Growth of TlInGaAs on InP by Gas-Source Molecular Beam Epitaxy
- GaN-Rich Side of GaNAs Grown by Gas Source Molecular Beam Epitaxy
- Gas Source Molecular Beam Epitaxy Growth of GaN on C-, A-, R- and M-Plane Sapphire and Silica Glass Substrates
- Gas Source Molecular Beam Epitaxial Growth of GaN_P_x (x ≦ 0.015) Using Ion-Removed Electron Cyclotron Resonance Radical Cell
- Local Tunneling Barrier Height at and around Subsurface Dopant Sites on p-GaAs(110)
- New III-V Compound Semiconductors TlInGaP for 0.9 μm to over 10 μm Wavelength Range Laser Diodes and Their First Successful Growth
- Magnetic Properties of Eu-Doped GaN Grown by Molecular Beam Epitaxy
- In-Situ Selective Area Etching of GaAs in Metalorganic Molecular Beam Epitaxy Chamber using Trisdimethylaminoarsenic
- Current Injection Laser Oscillation in TlInGaAs/GaAs Double Quantum Well Diodes with InGaP Cladding Layers
- Growth and Characterization of GaCrN/AlGaN/GaCrN Trilayer Structures
- Nature of Deep-Level Defects in GaCrN Diluted Magnetic Semiconductor
- 1.3–1.5-μm-Wavelength GaAs/InAs Superlattice Quantum-Dot Light-Emitting Diodes Grown on InP (411)A Substrates
- Negative Magnetoresistance Generated by Combination of Spin--Orbit Interaction and Applied Magnetic Field
- Design of Spin Polarization Analyzer using Transverse-Longitudinal Correlation in Resistivities Induced by Spin--Orbit Interaction
- Generation of Spin Current in Bipolar Conductors
- Composition Analysis of High-Stable Transparent Conductive Zinc Oxide by X-ray Photoelectron Spectroscopy and Secondary Ion Mass Spectroscopy
- Epitaxial Growth of Ferromagnetic Cubic GaCrN on MgO Substrate
- Evaluation of Device Configurations through Cross-Sectional Planes along Gates of 0.1 μm Metal–Oxide–Semiconductor Field-Effect Transistors by Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy
- Current Injection Laser Operation of GaAs/InAs Short-Period Superlattice/InP(411) Quantum Dot Laser Diodes with InAlAs Current Blocking Layer
- Growth and Characterization of GaN Nanostructures toward Electron Field Emitter Application (SELECTED TOPICS IN APPLIED PHYSICS : Nano Electronics and Devices : Characterization and Control of Nano Surfaces and Interfaces)
- Growth and Characterization of GaN Nanostructures toward Electron Field Emitter Application
- Current Injection Laser Oscillation in TlInGaAs/GaAs Double Quantum Well Diodes with InGaP Cladding Layers
- In-Situ Selective Area Etching of GaAs in Metalorganic Molecular Beam Epitaxy Chamber using Trisdimethylaminoarsenic