Anisotropy and Effective Charges in the Vibrational Spectra of Rhombohedral Boron-Rich Solids

スポンサーリンク

概要

著者

関連論文

Preparation of Standard Oxides for Analysis of Refractory Borides by X-ray Fluorescence Spectrometry
CuAu-Type Ordering Self-formed by Growing GaP/InP Short-Period Superlattices on GaAs (011) Substrate
Straight Quantum Wires Self-Formed by Growing GaP/InP Short-Period Superlattices on GaAs(011) Substrate
Improved Optical Properties of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices
Scanning Tunneling Microscopy Study on Self-Formation Process of Quantum Dot Structures by the Growth of GaP/InP Short-Period Superlattices on GaAs(311)A Substrate
Scanning Tunneling Microscopy/Spectroscopy Study of Self-Organized Quantum Dot Structures Formed in GaP/InP Short-Period Superlattices ( Scanning Tunneling Microscopy)
Gas Source Molecular Beam Epitaxy Growth of GaN-Rich Side of GaNP Alloys and Their Observation by Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
Self-Organized Dot/Columnar Structures and Quasi-Perfect CuPt-Type Ordering in (GaP)_n(InP)_n Superlattices Grown on GaAs (N11) Substrates by Gas Source Molecular Beam Epitaxy
Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy Observation of III-V Compound Semicomductor Nanostructures
Substrate Orientation Dependence of Optical Properties of GaP/AlP Short-Period Superlattices
Photoluminescence Wavelength Dependence on Layer Structure of GaP/AlP Modulated Superlattices
Improvement of Optical Properties of Multilayer Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices on GaAs(311)A
Time-Resolved Photoluminescence Study of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattice
Growth Temperature Dependence of Self-Formation Process of Quantum Dot Structures in GaP/InP Short-Period Superlattices Grown on GaAs (311)A Substrate
Possibility for the Discrimination of Submonolayer InAs and GaAs Grown on Tilted GaAs Substrate
Formation of a High-Electrical-Resistance Region in InP by Ga Ion Implantation
TlGaP Layers Grown on GaAs Substrates by Gas Source Molecular Beam Epitaxy
Improved Growth Kinetic Model for Metalorganic Molecular Beam Epitaxy Using Triethylgallium
Selective Area Epitaxy of GaSb by Metal-Organic Molecular Beam Epitaxy
Growth of TlInGaAs on InP by Gas-Source Molecular Beam Epitaxy
GaN-Rich Side of GaNAs Grown by Gas Source Molecular Beam Epitaxy
Gas Source Molecular Beam Epitaxy Growth of GaN on C-, A-, R- and M-Plane Sapphire and Silica Glass Substrates
Gas Source Molecular Beam Epitaxial Growth of GaN_P_x (x ≦ 0.015) Using Ion-Removed Electron Cyclotron Resonance Radical Cell
New III-V Compound Semiconductors TlInGaP for 0.9 μm to over 10 μm Wavelength Range Laser Diodes and Their First Successful Growth
Short Range Order Structure of Amorphous Boron Prepared by Various Methods
In-Situ Selective Area Etching of GaAs in Metalorganic Molecular Beam Epitaxy Chamber using Trisdimethylaminoarsenic
Anisotropy and Effective Charges in the Vibrational Spectra of Rhombohedral Boron-Rich Solids
Cluster Calculation of the Electronic Structure of Icosahedral Boron
The Basis Functions and the Matrix Representations of the Single and Double Icosahedral Point Group
Infrared and Raman Study of Plasma-Deposited Amorphous B_C_x Films
Electro- and Photoreflectance of Ultrathin Ge/Si Superlattices Grown by Phase-Locked Epitaxy
In-Situ Selective Area Etching of GaAs in Metalorganic Molecular Beam Epitaxy Chamber using Trisdimethylaminoarsenic
Electric Probe Measurements in an ECR Plasma CVD Apparatus

もっと見る

スポンサーリンク