Silicon Doping in InP Grown by Metalorganic Vapor Phase Epitaxy Using Silane

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概要

• 論文の詳細を見る

• Si-doped InP were grown by metalorganic vapor phase epitaxy (MOVPE) using silane (SiH_4). Room temperature electron concentrations of up to 7×10^<18>cm^<-3> were successfully achieved with good doping controllability. The growth of undoped high-purity InP (n〜2×10^<15>cm^<-3>) was observed immediately after the growth of heavily-doped InP (n〜2×10^<18>cm^<-3>). This indicates that SiH_4 has no "memory effect", though the memory effect has been reported for H_2Se. The optical properties are comparable with S- or Se-doped InP grown by MOVPE. These results show that the Si from SiH_4 is a useful n-type dopant for the MOVPE growth of InP.

• 社団法人応用物理学会の論文
• 1985-05-20

著者

• Asahi Hajime

  Ntt Atsugi Electrical Communication Laboratories

• Nojima Shunji

  Ntt Atsugi Electrical Communication Laboratories

• OISHI Mamoru

  NTT Atsugi Electrical Communication Laboratories

関連論文

• Observation of Room Temperature Current Oscillation in InGaAs/InAlAs MQW Pin Diodes
• Silicon Doping in InP Grown by Metalorganic Vapor Phase Epitaxy Using Silane

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