Multiple Scattering Correction to the Channeling Surface Peak for Thin Overlayers

概要

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The multiple-scattering contribution to the surface peak for MeV ion channeling studies of crystals covered with thin films ( ≲ 50 Å thick) can be experimentally subtracted since it is expressed in the form of an approximate error function. The method is based on experimental observations and computer calculations. Monte Carlo simulations give precise angular variations of the backscattering probabilities of probing ions from substrate atoms and angular distribution of incident particles after the passage of probing ions through a thin amorphous overlayer. The proposed method requires coverage-dependent signals in an energy region well behind the surface peak, where the spectrum height increases proportionally with film thickness. The limitations of the present method, including the case of substrate intermixing at the interface, are discussed.
社団法人応用物理学会の論文
1986-06-20